Surface emitting laser incorporating third reflector
First Claim
1. A vertical external cavity surface emitting laser (VECSEL) structure, comprising:
- an external out-coupling reflector;
a distributed Bragg reflector (DBR); and
a III-N heterostructure epitaxially grown on a GaN substrate and comprising;
an active region arranged between the DBR and the out-coupling reflector, the active region configured to emit radiation at a lasing wavelength, λ
lase in response to pump radiation emitted from a pump source and having pump wavelength, λ
pump; and
a partially reflecting element (PRE) comprising alternating epitaxial layer pairs, including a first layer of AlGaN, InAlN, or InAlGaN and a second layer of GaN or InAlGaN, the partially reflective element arranged between the active region and the external out-coupling reflector, the partially reflecting element having reflectivity of between about 30% and about 70% for radiation at the lasing wavelength and reflectivity of between about 30% and about 70% for radiation at the pump wavelength.
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Abstract
Surface emitting laser structures that include a partially reflecting element disposed in the laser optical cavity are disclosed. A vertical external cavity surface emitting laser (VECSEL) structure includes a pump source configured to emit radiation at a pump wavelength, λpump, an external out-coupling reflector, a distributed Bragg reflector (DBR,) and an active region arranged between the DBR and the out-coupling reflector. The active region is configured to emit radiation at a lasing wavelength, λlase. The VECSEL structure also includes partially reflecting element (PRE) arranged between the gain element and the external out-coupling reflector. The PRE has reflectivity of between about 30% and about 70% for the radiation at the lasing wavelength and reflectivity of between about 30% and about 70% for the radiation at the pump wavelength.
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Citations
19 Claims
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1. A vertical external cavity surface emitting laser (VECSEL) structure, comprising:
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an external out-coupling reflector; a distributed Bragg reflector (DBR); and a III-N heterostructure epitaxially grown on a GaN substrate and comprising; an active region arranged between the DBR and the out-coupling reflector, the active region configured to emit radiation at a lasing wavelength, λ
lase in response to pump radiation emitted from a pump source and having pump wavelength, λ
pump; anda partially reflecting element (PRE) comprising alternating epitaxial layer pairs, including a first layer of AlGaN, InAlN, or InAlGaN and a second layer of GaN or InAlGaN, the partially reflective element arranged between the active region and the external out-coupling reflector, the partially reflecting element having reflectivity of between about 30% and about 70% for radiation at the lasing wavelength and reflectivity of between about 30% and about 70% for radiation at the pump wavelength. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A surface emitting laser structure, comprising:
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a first reflector; a second reflector; an active region comprising multiple active region elements disposed between the first reflector and the second reflector, each active region element, comprising; one or more quantum well structures comprising one or more InxGa1-xN quantum wells disposed between barrier layers, where 0.10≦
x≦
0.5, the quantum wells configured to emit radiation having a wavelength, λ
lase; anda pre-strain layer comprising InGaN; and a GaN end spacer layer disposed between the second reflector and one of the quantum well structures, wherein the active region and the end spacer are configured so that the antinodes of the radiation overlap quantum well structures of the active region. - View Dependent Claims (18, 19)
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Specification