Low offset vertical hall device and current spinning method

• US 9,116,196 B2
• Filed: 11/11/2014
• Issued: 08/25/2015
• Est. Priority Date: 02/08/2011
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Ausserlechner, Udo, Motz, Mario
• Primary Examiner(s): LEDYNH, BOT L
• Application Number:
  US14/538,042
• Publication Number:
  US 20150061661A1
• Time in Patent Office: 287 Days
• Field of Search: 324/251
• US Class Current: 1/1
• CPC Class Codes: G01R 33/07 Hall effect devices
• CPC Class Codes: G01R 33/075 Hall devices configured for spinning current measurements
• CPC Class Codes: G01R 33/077 Vertical Hall-effect devices
• CPC Class Codes: H10B 61/00 Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
• CPC Class Codes: H10N 52/101 Semiconductor Hall-effect devices
• CPC Class Codes: H10N 59/00 Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00 MRAM devices H10B61/00

Abstract

One embodiment of the present invention relates to a vertical Hall-effect device. The device includes at least two supply terminals arranged to supply electrical energy to the first Hall-effect region; and at least one Hall signal terminal arranged to provide a first Hall signal from the first Hall-effect region. The first Hall signal is indicative of a magnetic field which is parallel to the surface of the semiconductor substrate and which acts on the first Hall-effect region. One or more of the at least two supply terminals or one or more of the at least one Hall signal terminal comprises a force contact and a sense contact.

Claims

1. A vertical Hall-effect device, comprising:

a conductive tub having a first conductivity type and disposed in a semiconductor substrate;

an isolation structure arranged around a perimeter of the tub to electrically isolate the tub from other semiconductor devices that are outside the perimeter;

a plurality of contact pairs having respective first and second contacts in the tub, wherein the respective first contacts are arranged along a first line in parallel with a first axis and wherein the respective second contacts are arranged along a second line in parallel with the first axis, wherein first and second lines are spaced apart from one another such that the respective first and second contacts are spaced symmetrically about the first axis; and

a controller configured to, at a first time, concurrently apply a first potential to a force contact of a first contact pair, apply a second potential to a force contact of a second contact pair, and apply a third potential to a force contact of a third contact pair;

the controller further configured to measure a Hall effect current from a sense contact of the first, second, or third contact pair;

while the first, second, and third potentials are applied.

2. The vertical Hall-effect device of claim 1, wherein the first, second, and third potentials are different.

3. The vertical Hall-effect device of claim 1, further comprising

a feedback circuit coupled to the first contact pair, and configured to control the first potential at a sense contact of the first contact pair by providing one or more feedback signals to the force contact of the first contact pair.

4. The vertical Hall-effect device of claim 3, wherein the feedback circuit comprises:

a transconductance input stage having a first input node configured to receive an input signal from the sense contact, a second input node configured to receive a reference signal, and an output node configured to output a current proportional to a voltage difference between the first and second input nodes; and

a current controlled current source configured to receive the current from the output node and to generate a feedback current based thereupon that is provided to the force contact of the first contact pair.

5. The vertical Hall-effect device of claim 1, where the vertical Hall-effect device is operated in a spinning current scheme that repetitively swaps how the first, second, and third potentials are applied with respect to the first, second, and third contacts, respectively, during operation.

6. The vertical Hall-effect device of claim 1, where the measured Hall effect current corresponds to a magnetic field experienced by the Hall-effect device while the first, second, and third potentials are applied.

7. The vertical Hall-effect device of claim 6, wherein the controller is adapted to, at a second time, concurrently apply the first potential to the force contact of the third contact pair, the second potential to the force contact of the second contact pair, and the third potential to the force contact of the first contact pair.

8. The vertical Hall-effect device of claim 7, wherein the controller is configured to measure a second Hall effect current from a sense contact while the first, second, and third potentials are applied during the second time.

9. The vertical Hall-effect device of claim 1, further comprising:

a third contact arranged on the axis and spaced apart from the respective first contacts and the respective second contacts.

10. The vertical Hall-effect device of claim 9, wherein the respective first contacts and the respective second contacts are the same size and geometry as one another, and wherein the third contact is larger than a first contact and is larger than a second contact.

11. The vertical Hall-effect device of claim 1, wherein the conductive tub is an n-type region and the plurality of contact pairs are n-type regions.

12. A vertical Hall-effect device, comprising:

a first tub having a first conductivity type and disposed in a semiconductor substrate;

a first plurality of contact pairs having respective first and second contacts in the first tub, wherein the first plurality of contact pairs are collectively arranged along a first line in parallel with a first axis, wherein first and second contacts in a contact pair of the first plurality of contact pairs are spaced apart from one another so as to be symmetrically balanced about the first line;

a second tub having the first conductivity type and disposed in the semiconductor substrate;

a second plurality of contact pairs having respective third and fourth contacts in the second tub, wherein the second plurality of contact pairs are collectively arranged along a second line in parallel with the first axis, wherein third and fourth contacts in a contact pair of the second plurality of contact pairs are spaced apart from one another so as to be symmetrically balanced about the second line; and

an interconnect layer that couples a contact pair in the first tub with a contact pair in the second tub.

13. The vertical Hall effect device of claim 12, further comprising:

a controller configured to, at a first time, concurrently apply a first potential to a first contact of a first contact pair, apply a second potential to a first contact of a second contact pair, and apply a third potential to a first contact of a third contact pair, the controller further configured to measure a Hall effect current from a second contact while the first, second, and third potentials are applied.

14. The vertical Hall-effect device of claim 13, where the first contact of the second contact pair is arranged between the first and third contact pairs.

15. The vertical Hall-effect device of claim 14, wherein the second potential lies between the first and third potentials.

16. The vertical Hall-effect device of claim 12, further comprising

a feedback circuit coupled to the interconnect layer, and configured to control a potential at sense contacts of the contact pairs in the first and second tubs, respectively, by providing one or more feedback signals to force contacts of the contact pairs in the first and second tubs.

17. The vertical Hall-effect device of claim 16, wherein the feedback circuit comprises:

a transconductance input stage having a first input node configured to receive an input signal from a sense contact of a first contact pair, a second input node configured to receive a reference signal, and an output node configured to output a current proportional to a voltage difference between the first and second input nodes; and

a current controlled current source configured to receive the current from the output node and to generate a feedback current based thereupon that is provided to a force contact of the first contact pair.

18. The vertical Hall-effect device of claim 12, further comprising:

a third contact arranged on the axis and spaced apart from the respective first contacts and the respective second contacts.

19. The vertical Hall-effect device of claim 18, wherein the plurality of first contacts are spaced apart from one another on the first line and collectively span a first total length along the first line, and wherein the third contact extends continuously over the first total length on a third line.

20. The vertical Hall-effect device of claim 12, wherein the first and second tubs are n-type regions and the first plurality of contact pairs and the second plurality of contact pairs are n-type regions.