Planar three-axis magnetometer

• US 9,116,198 B2
• Filed: 01/14/2013
• Issued: 08/25/2015
• Est. Priority Date: 02/10/2012
• Status: Active Grant

• Current Assignee: Memsic Semiconductor (Wuxi) Co., Ltd. (MZ Investment Holdings Ltd.)
• Original Assignee: Memsic Incorporated (MZ Investment Holdings Ltd.)
• Inventors: Cai, Yongyao, Qiu, Jiaoming, Jiang, Leyue
• Primary Examiner(s): Assouad, Patrick
• Assistant Examiner(s): CURTIS, SEAN M
• Application Number:
  US13/740,927
• Publication Number:
  US 20130265039A1
• Time in Patent Office: 953 Days
• Field of Search: 324/207.21, 324/228, 324/232, 324/244, 324/249, 324/252, 324/301, 360110-112, 360313-316, 3603271-32711, 360/322, 36032411-32412, 360/325, 360/327.22, 360/119.1, 360/123.28, 365/158, 338/32.R
• US Class Current: 1/1
• CPC Class Codes: G01R 33/09 Magnetoresistive devices
• CPC Class Codes: G01R 33/093 using multilayer structures, e.g. giant magnetoresistance sensors thin magnetic films H01F10/00
• CPC Class Codes: G01R 33/098 comprising tunnel junctions, e.g. tunnel magnetoresistance sensors

Abstract

A multi-axis GMR or TGMR based magnetic field sensor system is disclosed. Preferably a three axis sensor system is provided for sensing magnetic flux along three mutually orthogonal axes, which can be used for magnetic compass or other magnetic field sensing applications. The sensing units are operative to sense X and Y axis magnetic flux signals in the device (XY) plane, while Z axis sensitivity is achieved by use of a continuous ring shaped or octagonal magnetic concentrator that is adapted to convert the Z axis magnetic flux signal into magnetic flux signals in the XY plane.

Claims

1. A multi-axis magnetic field sensor comprising:

a substrate;

a first plurality of magnetoresistive sensing units disposed on the substrate and adapted to sense a magnetic field in an x-direction;

a second plurality of magnetoresistive sensing units disposed on the substrate and adapted to sense a magnetic field in a y-direction that is orthogonal to the x-direction; and

a magnetic concentrator having an inner portion and an outer portion, the concentrator disposed on the substrate so that at least one sensing unit from each of the first and the second pluralities of sensing devices is disposed adjacent to, and within, the inner portion and at least one sensing unit from each of the first and the second pluralities of sensing devices is disposed adjacent to, and within, the outer portion;

wherein the magnetic concentrator is operative to convert a magnetic field in a z-direction that is orthogonal to both the x-direction and the y-direction into a magnetic field in an xy-plane.

2. The magnetic field sensor of claim 1 wherein each of the sensing units is a GMR or a TGMR sensor unit.

3. The magnetic field sensor of claim 1 wherein the concentrator is circular.

4. The magnetic field sensor of claim 1 wherein the concentrator is octagonal.

5. The magnetic field sensor of claim 1 wherein the sensing units are each rectangular and have a longer side parallel to the x-direction or the y-direction.

6. The magnetic field sensor of claim 2 wherein each of the sensing units includes a multi-layer structure having an anti-ferromagnetic layer, a pinned layer, a ruthenium layer, a reference layer, and a free layer.

7. The magnetic field sensor of claim 6 further including a set coil and a reset coil disposed, respectively, above and below the concentrator and operative to, respectively, set and reset the magnetization directions of the free layers of the sensing units and of the concentrator.

8. A magnetic field sensor comprising:

a planar substrate, wherein virtual orthogonal co-planar X and Y axes are defined as being in an XY plane that is co-planar with the planar substrate and a virtual Z axis is defined as being orthogonal to the XY plane;

a substantially planar magnetic concentrator disposed on the planar substrate, the magnetic concentrator configured to convert a magnetic field in the Z axis into a magnetic field in the XY plane and the concentrator configured to define an inner region and an outer region of the planar substrate;

a first plurality of magnetoresistive sensing units disposed on the substrate adjacent the concentrator, each unit having a long axis aligned with the Y axis, and each unit configured to sense a magnetic field in the X axis; and

a second plurality of magnetoresistive sensing units disposed on the substrate adjacent the concentrator, each unit having a long axis aligned with the X axis, and each unit configured to sense a magnetic field in the Y axis,

wherein at least one sensing unit from each of the first and the second pluralities is disposed in the inner region and at least one sensing unit from each of the first and the second pluralities is disposed in the outer region.

9. The magnetic field sensor of claim 8, wherein the sensing units in the first and second pluralities are configured as respective first and second Wheatstone bridge circuits.

10. The magnetic field sensor of claim 8, further comprising:

a third plurality of magnetoresistive sensing units disposed on the substrate adjacent the concentrator, each unit having a long axis aligned with the Y axis, and each unit configured to sense a magnetic field in the X axis; and

a fourth plurality of magnetoresistive sensing units disposed on the substrate adjacent the concentrator, each unit having a long axis aligned with the X axis, and each unit configured to sense a magnetic field in the Y axis,

wherein at least one sensing unit from each of the third and the fourth pluralities is disposed in the inner region and at least one sensing unit from each of the third and the fourth pluralities is disposed in the outer region.

11. The magnetic field sensor of claim 8, wherein each of the sensing units is a multilayer structure comprising:

an anti-ferromagnetic layer;

a pinned layer having a magnetization that is set to be perpendicular to the respective long axis;

a ruthenium layer;

a reference layer; and

a free layer.

12. The magnetic field sensor of claim 11, further comprising:

a set/reset structure configured to alter a magnetization direction of the free layer and a magnetization direction of the concentrator.

13. The magnetic field sensor of claim 12, wherein the set/reset structure comprises:

a first set of wires disposed on one side of the concentrator; and

a second set of wires disposed on another side of the concentrator.

14. A method of measuring a magnetic field in three axes, the method comprising:

providing a planar substrate;

disposing a substantially planar magnetic concentrator on the planar substrate, the concentrator positioned to define an inner region and an outer region on the planar substrate;

defining a virtual XY plane, co-planar with the planar substrate, having virtual orthogonal co-planar X and Y axes defined therein and a virtual Z axis that is defined as being orthogonal to the XY plane;

converting an applied magnetic flux oriented in the Z axis to a magnetic flux substantially parallel to the XY plane by operation of the magnetic concentrator;

measuring the magnetic flux along the X axis at a location in the inner region to obtain a first x-flux value;

measuring the magnetic flux along the X axis at a location in the outer region to obtain a second x-flux value; and

obtaining a value representing the magnetic flux in the Z axis by determining a difference between the first and second x-flux values.

15. The method of claim 14, further comprising:

obtaining a value representing the magnetic flux in the X axis by summing the first and second x-flux values together.