Faceted, germanium slotted waveguide
First Claim
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1. A waveguide comprising:
- a substrate;
a first germanium sidewall formed adjacent to the substrate, wherein the first germanium sidewall is formed by growing germanium on the substrate;
a second germanium sidewall disposed onto the substrate, wherein the second germanium sidewall is formed by growing germanium on the substrate;
a protective layer disposed onto the substrate between the first germanium sidewall and the second germanium sidewall, wherein the first germanium sidewall, the second germanium sidewall, the protective layer and the substrate form the waveguide; and
a trapezoidal slot in the waveguide defined by the first germanium sidewall, the second germanium sidewall and the protective layer, wherein the trapezoidal slot is defined by an interior surface the first germanium sidewall grown on the substrate and an interior surface the second germanium sidewall grown on the substrate and an optical signal travels along the sidewalls within the trapezoidal slot.
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Abstract
A waveguide having a substrate, a first germanium sidewall and a second germanium sidewall. The waveguide is formed by growing the first germanium sidewall and second germanium sidewall on the substrate.
30 Citations
3 Claims
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1. A waveguide comprising:
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a substrate; a first germanium sidewall formed adjacent to the substrate, wherein the first germanium sidewall is formed by growing germanium on the substrate; a second germanium sidewall disposed onto the substrate, wherein the second germanium sidewall is formed by growing germanium on the substrate; a protective layer disposed onto the substrate between the first germanium sidewall and the second germanium sidewall, wherein the first germanium sidewall, the second germanium sidewall, the protective layer and the substrate form the waveguide; and a trapezoidal slot in the waveguide defined by the first germanium sidewall, the second germanium sidewall and the protective layer, wherein the trapezoidal slot is defined by an interior surface the first germanium sidewall grown on the substrate and an interior surface the second germanium sidewall grown on the substrate and an optical signal travels along the sidewalls within the trapezoidal slot. - View Dependent Claims (2, 3)
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Specification
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Current AssigneeBAE Systems Information and Electronic Systems Integration Incorporated (BAE Systems Plc)
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Original AssigneeBAE Systems Information and Electronic Systems Integration Incorporated (BAE Systems Plc)
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InventorsKamocsai, Robert L., Vu, Vu A.
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Primary Examiner(s)Kianni, Kaveh
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Application NumberUS13/647,128Time in Patent Office1,051 DaysField of Search385/14US Class Current1/1CPC Class CodesG02B 2006/12061 SiliconG02B 6/12 of the integrated circuit k...G02B 6/122 Basic optical elements, e.g...G02B 6/131 by using epitaxial growth e...
