Reduced stress high voltage word line driver
First Claim
1. A word line driver logic adapted for connection to a corresponding word line in a memory logic, the word line driver logic comprising:
- a first transistor including a first source/drain coupled to a first voltage supply providing a first voltage level, a second source/drain, and a gate adapted to receive a control signal which varies as a function of an input signal supplied to the word line driver logic;
a second transistor including a first source/drain connected to the second source/drain of the first transistor, a second source/drain coupled to the corresponding word line, and a gate coupled to a second voltage supply providing a second voltage level;
a third transistor including a first source/drain coupled to the corresponding word line, a second source/drain, and a gate coupled to the second voltage level;
a fourth transistor including a first source/drain connected to the second source/drain of the third transistor, a second source/drain coupled to a third voltage supply providing a third voltage level, and a gate adapted to receive a second control signal which varies as a function of the input signal;
a fifth transistor including a first source/drain connected to the second source/drain of the first transistor, a second source/drain coupled the second voltage level, and a gate coupled to the gate of the first transistor; and
a sixth transistor including a first source/drain connected to the second source/drain of the third transistor, a second source/drain coupled the second voltage level, and a gate coupled to the gate of the fourth transistor;
wherein the second voltage level is configured such that a voltage difference between the first and second source/drains of the first transistor and the fourth transistor is less than a voltage difference between the first and third voltage supplies.
9 Assignments
0 Petitions
Accused Products
Abstract
Exemplary embodiments of the present invention disclose a method and system for asserting a voltage transition from a low voltage to a high voltage with a voltage difference between the low and high voltages on a word line with a word line driver logic that is composed of thin-oxide MOS transistors, wherein the thin-oxide MOS transistors experience less than the voltage difference on the word line between any two of a source, a drain, and a gate. In a step, charging the word line from the low voltage to an intermediate voltage level. In another step, charging the word line to the high voltage from the intermediate voltage level.
38 Citations
19 Claims
-
1. A word line driver logic adapted for connection to a corresponding word line in a memory logic, the word line driver logic comprising:
-
a first transistor including a first source/drain coupled to a first voltage supply providing a first voltage level, a second source/drain, and a gate adapted to receive a control signal which varies as a function of an input signal supplied to the word line driver logic; a second transistor including a first source/drain connected to the second source/drain of the first transistor, a second source/drain coupled to the corresponding word line, and a gate coupled to a second voltage supply providing a second voltage level; a third transistor including a first source/drain coupled to the corresponding word line, a second source/drain, and a gate coupled to the second voltage level; a fourth transistor including a first source/drain connected to the second source/drain of the third transistor, a second source/drain coupled to a third voltage supply providing a third voltage level, and a gate adapted to receive a second control signal which varies as a function of the input signal; a fifth transistor including a first source/drain connected to the second source/drain of the first transistor, a second source/drain coupled the second voltage level, and a gate coupled to the gate of the first transistor; and a sixth transistor including a first source/drain connected to the second source/drain of the third transistor, a second source/drain coupled the second voltage level, and a gate coupled to the gate of the fourth transistor; wherein the second voltage level is configured such that a voltage difference between the first and second source/drains of the first transistor and the fourth transistor is less than a voltage difference between the first and third voltage supplies. - View Dependent Claims (2, 3, 4, 5, 6)
-
-
7. A method for asserting a voltage transition from a low voltage to a high voltage with a voltage difference between the low and high voltages on a word line in a memory logic with a word line driver logic that is composed of thin-oxide MOS transistors, wherein the thin-oxide MOS transistors experience less than the voltage difference on the word line between any two of a source, a drain, and a gate, the method comprising the steps of:
-
charging the word line from the low voltage to an intermediate voltage that is higher than the low voltage and lower than the high voltage when transitioning the word line from the low voltage to the high voltage; and charging the word line to the high voltage from the intermediate voltage when transitioning the word line from the low voltage to the high voltage; discharging the word line from the high voltage to the intermediate voltage when transitioning the word line from the high voltage to the low voltage; and discharging the word line from the intermediate voltage to the low voltage when transitioning the word line from the low voltage to the high voltage. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14)
-
-
15. A 2X voltage driver logic adapted for 2X voltage output, 2X being a voltage that is twice a voltage limit of a thin oxide MOSFET device, the 2X voltage driver logic comprising:
-
a first transistor including a first source/drain coupled to a first voltage supply providing a first voltage level, a second source/drain, and a gate adapted to receive a control signal which varies as a function of an input signal supplied to the 2X voltage driver logic; a second transistor including a first source/drain connected to the second source/drain of the first transistor, a second source/drain coupled to the corresponding 2X voltage output, and a gate coupled to a second voltage supply providing a second voltage level; a third transistor including a first source/drain coupled to the corresponding 2X voltage output, a second source/drain, and a gate coupled to the second voltage level; a fourth transistor including a first source/drain connected to the second source/drain of the third transistor, a second source/drain coupled to a third voltage supply providing a third voltage level, and a gate adapted to receive a second control signal which varies as a function of the input signal; a fifth transistor including a first source/drain connected to the second source/drain of the first transistor, a second source/drain coupled the second voltage level, and a gate coupled to the gate of the first transistor; and a sixth transistor including a first source/drain connected to the second source/drain of the third transistor, a second source/drain coupled the second voltage level, and a gate coupled to the gate of the fourth transistor; wherein the second voltage level is configured such that a voltage difference between the first and second source/drains of the first transistor and the fourth transistor is less than a voltage difference between the first and third voltage supplies. - View Dependent Claims (16, 17, 18, 19)
-
Specification