Integrated micro-electromechanical switches and a related method thereof

• US 9,117,610 B2
• Filed: 06/25/2014
• Issued: 08/25/2015
• Est. Priority Date: 11/30/2011
• Status: Active Grant

• Current Assignee: General Electric Company
• Original Assignee: General Electric Company
• Inventors: Aimi, Marco Francesco, Spence, Dan Kenrick
• Primary Examiner(s): Rojas, Bernard
• Application Number:
  US14/314,344
• Publication Number:
  US 20140305777A1
• Time in Patent Office: 426 Days
• Field of Search: 335/78, 200/181
• US Class Current: 1/1
• CPC Class Codes: B81B 2201/00 Specific applications of microelectromechanical systems
• CPC Class Codes: B81B 7/008 MEMS characterised by an electronic circuit specially adapted for controlling or driving the same B81B7/0087 takes precedence; arrangements for starting, regulating, braking, or otherwise controlling an actuator H02N; control arrangements or circuits for visual indicators G09G3/00
• CPC Class Codes: H01H 2059/0018 Special provisions for avoiding charge trapping, e.g. insulation layer between actuating electrodes being permanently polarised by charge trapping so that actuating or release voltage is altered
• CPC Class Codes: H01H 59/0009 making use of micromechanics

Abstract

A system includes a plurality of micro-electromechanical switches including a plurality of gates, coupled to each other. Each micro-electromechanical switch includes a beam electrode disposed on a substrate. A beam includes an anchor portion coupled to the beam electrode. The beam includes a first beam portion extending from the anchor portion along a first direction; and a second beam portion extending from the anchor portion along a second direction opposite to the first direction. A first control electrode and a first contact electrode are disposed on the substrate, facing the first beam portion. A second control electrode and a second contact electrode are disposed on the substrate, facing the second beam portion. The first control electrode and the second control electrode are coupled to form a gate among the plurality of gates. The plurality of micro-electromechanical switches is arranged in at least one of a series arrangement, parallel arrangement.

Claims

1. A system comprising:

a plurality of micro-electromechanical switches comprising a plurality of gates, coupled to each other, wherein each micro-electromechanical switch further comprises;

a substrate;

a beam electrode disposed on the substrate;

a beam comprising an anchor portion coupled to the beam electrode, a first beam portion extending from the anchor portion along a first direction; and

a second beam portion extending from the anchor portion along a second direction opposite to the first direction;

a first control electrode and a first contact electrode disposed on the substrate, facing the first beam portion; and

a second control electrode and a second contact electrode disposed on the substrate, facing the second beam portion;

wherein the first control electrode and the second control electrode are coupled to form a gate among the plurality of gates; and

at least one impedance device comprising a parasitic impedance of the plurality of micro-electromechanical switches, coupled to at least one of (i) the plurality of gates (ii) the first contact electrode and the first beam portion (iii) the second contact electrode and the second beam portion (iv) the beam of each micro-electromechanical switch;

wherein the plurality of micro-electromechanical switches is arranged in at least one of a series arrangement, parallel arrangement.

2. The system of claim 1, wherein each micro-electromechanical switch comprises a micro-electromechanical radio frequency switch.

3. The system of claim 1, wherein each micro-electromechanical switch is disposed in a device configured to operate in a radio frequency range.

4. The system of claim 3, wherein the device comprises a magnetic resonance imaging system comprising a single modality imaging system or a multi-modality imaging system.

5. The system of claim 4, wherein the each micro-electromechanical switch is configured to couple and decouple one or more radio frequency receive surface coils, radio frequency transmit surface coils of the magnetic resonance imaging system.

6. A method comprising

applying an actuation voltage equally to a plurality of micro-electromechanical switches comprising a plurality of gates, coupled to each other, wherein each micro-electromechanical switch further comprises:

a substrate;

a beam electrode disposed on the substrate;

a beam comprising an anchor portion coupled to the beam electrode, a first beam portion extending from the anchor portion along a first direction; and

a second beam portion extending from the anchor portion along a second direction opposite to the first direction;

a first control electrode and a first contact electrode disposed on the substrate, facing the first beam portion; and

a second control electrode and a second contact electrode disposed on the substrate, facing the second beam portion;

wherein the first control electrode and the second control electrode are coupled to form a gate among the plurality of gates; and

generating a parasitic impedance for the plurality of micro-electromechanical switches via at least one impedance device;

wherein the at least one impedance device is coupled to at least one of (i) the plurality of gates (ii) the first contact electrode and the first beam portion (iii) the second contact electrode and the second beam portion (iv) the beam of each micro-electromechanical switch;

wherein the plurality of micro-electromechanical switches is arranged in at least one of a series arrangement, parallel arrangement.

7. The method of claim 6, further comprising maintaining a voltage between the beam electrode and the first contact electrode, the second contact electrode at less than 0.5 volts via the at least one impedance device during closing of the plurality of micro-electromechanical switches.

8. The method of claim 6, further comprising modifying influence of an external stimulus around the plurality of micro-electromechanical switches via the at least one impedance device.

9. The method of claim 6, further comprising sharing an actuation voltage across the plurality of micro-electromechanical switches.

10. The method of claim 9, further comprising maintaining a voltage between the beam electrode and the gate at less than 10 volts via the at least one impedance device during sharing of the actuation voltage between the plurality of micro-electromechanical switches.

11. The method of claim 6, further comprising generating a parasitic capacitance between the beam and the gate.

12. The method of claim 6, further comprising applying an actuation voltage equally to the plurality of micro-electromechanical switches.

13. The method of claim 6, further comprising controlling voltage coupling from at least one of the first and second contact electrodes to the gate.

14. The method of claim 6, further comprising controlling voltage coupling between the plurality of electro-mechanical switches via the plurality of gates.

15. The method of claim 6, further comprising minimizing a voltage across the first and second contact electrodes during switching operation.