Method for manufacturing semiconductor device
First Claim
1. A method for manufacturing a semiconductor device comprising the steps of:
- forming an oxide semiconductor film over an oxide insulating film;
etching the oxide semiconductor film to form an island-shaped oxide semiconductor film;
forming a metal film over the island-shaped oxide semiconductor film;
adding oxygen to the metal film to form a metal oxide film, and adding oxygen also to the island-shaped oxide semiconductor film;
forming a gate electrode over the metal oxide film;
forming sidewalls in contact with side surfaces of the gate electrode;
etching part of the metal oxide film where the gate electrode and the sidewalls do not overlap;
forming an interlayer insulating film over the gate electrode, the sidewalls, and the island-shaped oxide semiconductor film; and
forming a pair of contact plugs electrically connected to the island-shaped oxide semiconductor film through openings penetrating the interlayer insulating film.
1 Assignment
0 Petitions
Accused Products
Abstract
To improve productivity of a transistor that includes an oxide semiconductor and has good electrical characteristics. In a top-gate transistor including a gate insulating film and a gate electrode over an oxide semiconductor film, a metal film is formed over the oxide semiconductor film, oxygen is added to the metal film to form a metal oxide film, and the metal oxide film is used as a gate insulating film. After an oxide insulating film is formed over the oxide semiconductor film, a metal film may be formed over the oxide insulating film. Oxygen is added to the metal film to form a metal oxide film and added also to the oxide semiconductor film or the oxide insulating film.
142 Citations
16 Claims
-
1. A method for manufacturing a semiconductor device comprising the steps of:
-
forming an oxide semiconductor film over an oxide insulating film; etching the oxide semiconductor film to form an island-shaped oxide semiconductor film; forming a metal film over the island-shaped oxide semiconductor film; adding oxygen to the metal film to form a metal oxide film, and adding oxygen also to the island-shaped oxide semiconductor film; forming a gate electrode over the metal oxide film; forming sidewalls in contact with side surfaces of the gate electrode; etching part of the metal oxide film where the gate electrode and the sidewalls do not overlap; forming an interlayer insulating film over the gate electrode, the sidewalls, and the island-shaped oxide semiconductor film; and forming a pair of contact plugs electrically connected to the island-shaped oxide semiconductor film through openings penetrating the interlayer insulating film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
-
-
9. A method for manufacturing a semiconductor device comprising the steps of:
-
forming an oxide semiconductor film over an oxide insulating film; etching the oxide semiconductor film to form an island-shaped oxide semiconductor film; forming a metal film over the island-shaped oxide semiconductor film; adding oxygen to the metal film to form a metal oxide film, and adding oxygen also to the island-shaped oxide semiconductor film; forming a gate electrode over the metal oxide film; forming an interlayer insulating film over the gate electrode and the island-shaped oxide semiconductor film; and forming a pair of contact plugs electrically connected to the island-shaped oxide semiconductor film through openings penetrating the interlayer insulating film. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
-
Specification