Method of producing epitaxial silicon wafer, epitaxial silicon wafer, and method of producing solid-state image sensing device

• US 9,117,676 B2
• Filed: 11/12/2013
• Issued: 08/25/2015
• Est. Priority Date: 11/13/2012
• Status: Active Grant

• Current Assignee: Sumco Corporation
• Original Assignee: Sumco Corporation
• Inventors: Kadono, Takeshi
• Primary Examiner(s): Geyer, Scott B
• Application Number:
  US14/078,286
• Publication Number:
  US 20140134780A1
• Time in Patent Office: 651 Days
• Field of Search: None
• US Class Current: 1/1
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02576 N-type
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 21/02658 Pretreatments cleaning in general H01L21/02041
• CPC Class Codes: H01L 27/14687 Wafer level processing
• CPC Class Codes: H01L 29/167 further characterised by the doping material H01L29/1604 takes precedence
• CPC Class Codes: H01L 29/36 characterised by the concentration or distribution of impurities in the bulk material within semiconductor regions H01L29/06

Abstract

Provided is an epitaxial silicon wafer with reduced metal contamination achieved by higher gettering capability and a method of efficiently producing the same.

The method of producing an epitaxial wafer includes a wafer production step of pulling a single crystal silicon ingot having a COP formation region by Czochralski process, and subjecting the obtained single crystal silicon ingot to slicing, thereby producing a silicon wafer 10 including COPs; a cluster ion irradiation step of irradiating the produced silicon wafer 10 with cluster ions 16 to form a modifying layer 18 formed from a constituent element of the cluster ions 16, contained as a solid solution in a surface portion 10A of the silicon wafer 10; and an epitaxial layer formation step of forming an epitaxial layer 20 on the modifying layer 18 of the silicon wafer 10.

Claims

1. A method of producing an epitaxial wafer comprising:

a wafer production step of pulling a single crystal silicon ingot having a COP formation region by Czochralski process, and subjecting the obtained single crystal silicon ingot to slicing, thereby producing a silicon wafer including COPs;

a cluster ion irradiation step of irradiating the produced silicon wafer with cluster ions to form a modifying layer formed from a constituent element of the cluster ions in a surface portion of the silicon wafer; and

an epitaxial layer formation step of forming an epitaxial layer on the modifying layer of the silicon wafer.

2. The method of producing an epitaxial silicon wafer, according to claim 1, wherein the single crystal silicon ingot is pulled at growing conditions:

residence time of the single crystal silicon ingot for 150 min or less in a temperature range of 1200°

C. to 1000°

C.

3. The method of producing an epitaxial silicon wafer, according to claim 2, wherein the pulling is performed while cooling around the single crystal silicon ingot.

4. The method of producing an epitaxial silicon wafer, according to claim 1, wherein after the cluster ion irradiation step, the silicon wafer is transferred into an epitaxial growth apparatus to be subjected to the epitaxial layer formation step without heat treating the silicon wafer for recovering its crystallinity.

5. The method of producing an epitaxial silicon wafer, according to claim 1, wherein the cluster ions contain carbon as a constituent element.

6. The method of producing an epitaxial silicon wafer, according to claim 5, wherein the cluster ions contain at least two kinds of elements including carbon as constituent elements.

7. The method of producing an epitaxial silicon wafer, according to claim 1, wherein in the cluster ion irradiation step, the silicon wafer is irradiated with the cluster ions such that the peak of a concentration profile of the constituent element in the depth direction of the modifying layer lies at a depth within 150 nm from the surface of the silicon wafer.

8. The method of producing an epitaxial silicon wafer, according to claim 7, wherein the cluster ion irradiation step is performed under the conditions of acceleration voltage:

50 keV/atom or less, cluster size;

100 or less, and carbon dose;

1×

10¹⁶ atoms/cm² or less.

9. The method of producing an epitaxial silicon wafer, according to claim 7, wherein the cluster ion irradiation step is performed under the conditions of acceleration voltage:

40 keV/atom or less, cluster size;

60 or less, and carbon dose;

5×

10¹⁵ atoms/cm² or less.

10. The method of producing an epitaxial silicon wafer, according to claim 1, wherein in the first step, the silicon wafer is irradiated with the cluster ions such that the full width half maximum of a concentration profile of the constituent element in the depth direction of the modifying layer is 100 nm or less.

11. A method of producing a solid-state image sensing device, wherein a solid-state image sensing device is formed on the epitaxial layer, located in the surface portion of an epitaxial silicon wafer fabricated by the producing method according to claim 1.

12. A method of producing a solid-state image sensing device, wherein a solid-state image sensing device is formed on the epitaxial layer, located in the surface portion of the epitaxial silicon wafer fabricated by the producing method according to claim 1, wherein in the first step, the silicon wafer is irradiated with the cluster ions such that the full width half maximum of a concentration profile of the constituent element in the depth direction of the modifying layer is 100 nm or less.