Device architecture and method for precision enhancement of vertical semiconductor devices
First Claim
1. A method of making a vertical field effect device having a drain terminal, a source terminal and a gate terminal, the method comprising:
- providing a first field effect device connected to the drain terminal, the source terminal and the gate terminal;
providing a set of second field effect devices, connected to the source terminal by a set of parallel activation fuses and connected to the gate terminal by a set of series isolation fuses;
measuring a device parameter measurement value;
comparing the device parameter measurement value to a target value; and
,if the device parameter measurement value meets the target value, then blowing a parallel activation fuse of the set of parallel activation fuses.
1 Assignment
0 Petitions
Accused Products
Abstract
Improvement of key electrical specifications of vertical semiconductor devices, usually found in the class of devices known as discrete semiconductors, has a direct impact on the performance achievement and power efficiency of the systems in which these devices are used. Imprecise vertical device specifications cause system builders to either screen incoming devices for their required specification targets or to design their system with lower performance or lower efficiency than desired. Disclosed is an architecture and method for achieving a desired target specification for a vertical semiconductor device. Precise trimming of threshold voltage improves targeting of both on-resistance and switching time. Precise trimming of gate resistance also improves targeting of switching time. Precise trimming of a device'"'"'s effective width improves targeting of both on-resistance and current-carrying capability. Device parametrics are trimmed to improve a single device, or a parametric specification is targeted to match specifications on two or more devices.
-
Citations
7 Claims
-
1. A method of making a vertical field effect device having a drain terminal, a source terminal and a gate terminal, the method comprising:
-
providing a first field effect device connected to the drain terminal, the source terminal and the gate terminal; providing a set of second field effect devices, connected to the source terminal by a set of parallel activation fuses and connected to the gate terminal by a set of series isolation fuses; measuring a device parameter measurement value; comparing the device parameter measurement value to a target value; and
,if the device parameter measurement value meets the target value, then blowing a parallel activation fuse of the set of parallel activation fuses. - View Dependent Claims (2, 3, 4, 5, 6, 7)
-
Specification