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Semiconductor device and structure

  • US 9,117,749 B1
  • Filed: 03/15/2013
  • Issued: 08/25/2015
  • Est. Priority Date: 03/15/2013
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device, comprising:

  • a first transistor sharing a first diffusion with a second transistor;

    a third transistor sharing a second diffusion with said second transistor; and

    a fourth transistor sharing a third diffusion with a fifth transistor;

    a sixth transistor sharing a fourth diffusion with said fifth transistor,wherein said device comprises;

    a first layer comprising a first number of said transistors overlaid bya second layer comprising a second number of said transistors;

    a first programmable resistor; and

    a second programmable resistor;

    wherein said first programmable resistor is connected to said first diffusion and said second diffusion, andsaid second programmable resistor is connected to said third diffusion and said fourth diffusion,wherein at least one of said first number of said transistors is self-aligned to at least one of said second number of said transistors, andwherein a portion of said first programmable resistor is disposed either to a side isolation region of said second transistor or directly above a top isolation region of said second transistor, andwherein said programmable resistors comprise one of the following;

    memristor, transition metal oxides, polymeric memristor, ferroelectric memristor, spintronic memristor, spin transfer torque, phase-change structure, programmable metallization structure, conductive-bridging structure, magnetoresistive structure, chalcogenide structure.

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