Method for manufacturing semiconductor device using oxide semiconductor

• US 9,117,920 B2
• Filed: 05/09/2012
• Issued: 08/25/2015
• Est. Priority Date: 05/19/2011
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Koezuka, Junichi, Sato, Yuhei, Yamazaki, Shunpei
• Primary Examiner(s): Le, Thao X
• Assistant Examiner(s): DYKES, LAURA M
• Application Number:
  US13/467,493
• Publication Number:
  US 20120295397A1
• Time in Patent Office: 1,203 Days
• Field of Search: 438/104
• US Class Current: 1/1
• CPC Class Codes: H01L 29/78693 the semiconducting oxide being amorphous

Abstract

Stable electrical characteristics and high reliability are provided to a semiconductor device including an oxide semiconductor. In a process of manufacturing a transistor including an oxide semiconductor film, an amorphous oxide semiconductor film is formed, and oxygen is added to the amorphous oxide semiconductor film, so that an amorphous oxide semiconductor film containing excess oxygen is formed. Then, an aluminum oxide film is formed over the amorphous oxide semiconductor film, and heat treatment is performed thereon to crystallize at least part of the amorphous oxide semiconductor film, so that a crystalline oxide semiconductor film is formed.

Claims

1. A method for manufacturing a semiconductor device, comprising the steps of:

forming an insulating film;

forming an amorphous oxide semiconductor film over the insulating film;

performing a first heat treatment on the amorphous oxide semiconductor film;

forming a gate insulating film over the amorphous oxide semiconductor film;

adding oxygen into the amorphous oxide semiconductor film on which the first heat treatment is performed by an ion implantation method, an ion doping method, or a plasma immersion ion implantation method wherein the oxygen is added to the amorphous oxide semiconductor film through the gate insulating film;

forming an aluminum oxide film over the amorphous oxide semiconductor film containing added oxygen; and

performing a second heat treatment on the amorphous oxide semiconductor film containing added oxygen to form an oxide semiconductor film including a crystal,

wherein the amorphous oxide semiconductor film has a more uniform amorphous state by the step of adding the oxygen.

2. The method for manufacturing a semiconductor device according to claim 1, wherein the crystal included in the oxide semiconductor film has a c-axis substantially perpendicular to a surface.

3. The method for manufacturing a semiconductor device according to claim 1, further comprising the step of

forming a gate electrode layer over the gate insulating film,

wherein the oxygen is added to the amorphous oxide semiconductor film through the gate insulating film.

4. The method for manufacturing a semiconductor device according to claim 1, further comprising the step of forming an oxide insulating film between the amorphous oxide semiconductor film and the aluminum oxide film.

5. The method for manufacturing a semiconductor device according to claim 1, wherein a temperature of first heat treatment is lower than a temperature of second heat treatment.

6. A method for manufacturing a semiconductor device, comprising the steps of:

forming an insulating film;

forming an amorphous oxide semiconductor film over the insulating film;

performing a first heat treatment on the amorphous oxide semiconductor film;

forming an aluminum oxide film over the amorphous oxide semiconductor film;

adding oxygen into the amorphous oxide semiconductor film on which the first heat treatment is performed through the aluminum oxide film by an ion implantation method, an ion doping method, or a plasma immersion ion implantation method; and

performing a second heat treatment on the amorphous oxide semiconductor film containing added oxygen to form an oxide semiconductor film including a crystal,

wherein the amorphous oxide semiconductor film has a more uniform amorphous state by the step of adding the oxygen.

7. The method for manufacturing a semiconductor device according to claim 6, wherein the crystal included in the oxide semiconductor film has a c-axis substantially perpendicular to a surface.

8. The method for manufacturing a semiconductor device according to claim 6, further comprising the step of forming a gate insulating film over the amorphous oxide semiconductor film,

wherein the oxygen is added to the amorphous oxide semiconductor film through the gate insulating film.

9. The method for manufacturing a semiconductor device according to claim 6, further comprising the steps of:

forming a gate insulating film over the amorphous oxide semiconductor film; and

forming a gate electrode layer over the gate insulating film,

wherein the oxygen is added to the amorphous oxide semiconductor film through the gate insulating film.

10. The method for manufacturing a semiconductor device according to claim 6, further comprising the step of forming an oxide insulating film between the amorphous oxide semiconductor film and the aluminum oxide film.

11. The method for manufacturing a semiconductor device according to claim 6, wherein a temperature of first heat treatment is lower than a temperature of second heat treatment.