Semiconductor light-emitting device and method for fabricating the same

• US 9,117,971 B2
• Filed: 04/15/2013
• Issued: 08/25/2015
• Est. Priority Date: 10/15/2009
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Jeong, Hwan Hee, Lee, Sang Youl, Song, June O, Oh, Tchang Hun, Choi, Hee Seok, Choi, Kwang Ki
• Primary Examiner(s): Tran, Tony
• Application Number:
  US13/862,784
• Publication Number:
  US 20130228814A1
• Time in Patent Office: 862 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/145 with a current-blocking structure
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

A semiconductor light-emitting device is provided. The semiconductor light-emitting device may include a light-emitting structure, an electrode, an ohmic layer, an electrode layer, an adhesion layer, and a channel layer. The light-emitting structure may include a compound semiconductor layer. The electrode may be disposed on the light-emitting structure. The ohmic layer may be disposed under the light-emitting structure. The electrode layer may include a reflective metal under the ohmic layer. The adhesion layer may be disposed under the electrode layer. The channel layer may be disposed along a bottom edge of the light-emitting structure.

Claims

1. A semiconductor light-emitting device, comprising:

a conductive support member;

a metal layer on the conductive support member;

an electrode layer on the metal layer;

a plurality of compound semiconductor layers on the electrode layer and at least comprising a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer on the active layer;

a channel layer having a bottom surface that directly contacts the metal layer;

an insulating layer surrounding the plurality of compound semiconductor layers;

a top electrode on the second conductivity type semiconductor layer, wherein the metal layer comprises a first protrusion vertically overlapped with the top electrode, and a second protrusion vertically overlapped with the channel layer, wherein the electrode layer comprises a flat bottom portion and at least two protrusions that protrude downwardly with respect to the top electrode on both side of the flat bottom portion, and wherein side surfaces of the at least two protrusions contact the metal layer; and

wherein the metal layer further comprises a top surface and a bottom surface opposite to each other, wherein the top surface comprises a first top surface and a second top surface around the first top surface and the bottom surface is substantially flat, wherein at least a portion of the first top surface directly contacts the electrode layer, wherein a first height between the first top surface and the bottom surface is different from a second height of the second top surface from the bottom surface, and wherein the first top surface is at a center area and the second top surface is at a peripheral area, the first height being less than the second height.

2. The semiconductor-light emitting device according to claim 1, wherein the second top surface comprises a first portion that vertically overlaps the active layer and a second portion having no overlap with the active layer.

3. The semiconductor light-emitting device according to claim 1, wherein the electrode layer is spaced apart from the channel layer.

4. The semiconductor light-emitting device according to claim 1, wherein the metal layer surrounds a side surface of the electrode layer.

5. The semiconductor light-emitting device according to claim 1, wherein the electrode layer has a size smaller than a size of the first conductivity type semiconductor layer.

6. The semiconductor light-emitting device according to claim 1, wherein the electrode layer has a size smaller than a size of the metal layer.

7. The semiconductor light-emitting device according to claim 1, wherein the electrode layer is not overlapped with the channel layer.

8. The semiconductor light-emitting device according to claim 1, wherein insulating layer comprises a material the same as a material of the channel layer.

9. The semiconductor light-emitting device according to claim 1, wherein the channel layer includes at least one of a transparent oxide material, a transparent nitride material, or a transparent insulating material.

10. The semiconductor light-emitting device according to claim 1, further comprising:

at least one of an ohmic layer or a current blocking layer between the first conductivity type semiconductor layer and the electrode layer.

11. The semiconductor light-emitting device according to claim 10, wherein the current blocking layer includes a material having an electrical conductivity lower than that of a material of the electrode layer.

12. The semiconductor light-emitting device according to claim 1, wherein a top surface of the second protrusion is higher than a top-most surface of the first protrusion.

13. The semiconductor light-emitting device according to claim 1, wherein the first protrusion protrudes upwardly toward the top electrode and is vertically overlapped with the top electrode, wherein the second protrusion protrudes upwardly toward the channel layer and is vertically overlapped with the channel layer.

14. A semiconductor light-emitting device, comprising:

a conductive support member;

a metal layer on the conductive support member;

an electrode layer on the metal layer;

an ohmic layer on the electrode layer;

a plurality of compound semiconductor layers on the electrode layer and at least comprising a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer on the active layer;

a channel layer on the metal layer;

an insulating layer surrounding the plurality of compound semiconductor layers;

a top electrode on the second conductivity type semiconductor layer; and

a current blocking layer between the first conductivity type semiconductor layer and the electrode layer, wherein the second conductivity type semiconductor layer has a top surface that includes a roughness pattern, wherein the current blocking layer is vertically overlapped with the top electrode, wherein the metal layer comprises a first protrusion vertically overlapped with the current blocking layer, and a second protrusion vertically overlapped with the channel layer, wherein the ohmic layer comprises at least one of Ni or Ag, wherein the ohmic layer is in contact with a side surface of the channel layer, wherein an outer edge portion of the metal layer is in direct contact with an outer edge portion of the channel layer, and wherein the ohmic layer is spaced apart from the outer edge portion of the metal; and

wherein the metal layer further comprises a top surface and a bottom surface opposite to each other, wherein the top surface comprises a first top surface and a second top surface around the first top surface and the bottom surface is substantially flat, wherein a first height between the first top surface and the bottom surface is different from a second height of the second top surface from the bottom surface, and wherein the first top surface is at a center area and the second top surface is at a peripheral area, the first height being less than the second height.

15. The semiconductor-light emitting device according to claim 14, wherein the second top surface comprises a first portion that vertically overlaps the active layer and a second portion having no overlap with the active layer.

16. The semiconductor light-emitting device according to claim 14, wherein the electrode layer is spaced apart from the channel layer.

17. A semiconductor light-emitting device, comprising:

a conductive support member;

a metal layer on the conductive support member;

an electrode layer on the metal layer;

a plurality of compound semiconductor layers on the electrode layer and at least comprising a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer on the active layer;

a channel layer on the metal layer;

an insulating layer surrounding the plurality of compound semiconductor layers;

a top electrode on the second conductivity type semiconductor layer, wherein the top electrode is spaced apart from the insulating layer, wherein the electrode layer comprises a recess portion vertically overlapped with the top electrode, wherein the metal layer comprises a first protrusion vertically overlapped with the recess portion, and a second protrusion vertically overlapped with the channel layer, wherein both end portions of the electrode are not in contact with the channel layer; and

wherein the metal layer further comprises a top surface and a bottom surface opposite to each other, wherein the top surface comprises a first top surface and a second top surface around the first top surface and the bottom surface is substantially flat, wherein a first height between the first top surface and the bottom surface is different from a second height of the second top surface from the bottom surface, and wherein the first top surface is at a center area and the second top surface is at a peripheral area, the first height being less than the second height.

18. The semiconductor light-emitting device according to claim 17, wherein the channel layer has a bottom surface that directly contacts the metal layer.