Method and apparatus for LDO and distributed LDO transient response accelerator

• US 9,122,293 B2
• Filed: 03/07/2013
• Issued: 09/01/2015
• Est. Priority Date: 10/31/2012
• Status: Active Grant

• Current Assignee: Qualcomm, Inc.
• Original Assignee: Qualcomm, Inc.
• Inventors: Price, Burt L., Shah, Dhaval R., Kolla, Yeshwant Nagaraj
• Primary Examiner(s): Berhane, Adolf
• Assistant Examiner(s): Sprenger, Kevin H
• Application Number:
  US13/788,354
• Publication Number:
  US 20140117956A1
• Time in Patent Office: 908 Days
• Field of Search: 323/265, 323/268, 323/269, 323/270, 323/273, 323/274, 323/280
• US Class Current: 1/1
• CPC Class Codes: G05F 1/575 characterised by the feedback circuit
• CPC Class Codes: G05F 1/613 using semiconductor devices in parallel with the load as final control devices G05F1/461 takes precedence

Abstract

A transient response accelerated (TRA) low dropout (LDO) regulator has an error amplifier having a feedback input, and a reference input configured to receive a reference voltage, and an output that controls a pass gate. The pass gate output voltage is applied to the feedback input. A transient response accelerator (TRA) circuit detects a rapid voltage drop on the pass gate output and, in response, applies a pulse control that rapidly lowers the resistance of the pass gate.

Claims

1. A transient response accelerated low dropout (LDO) regulator, comprising:

an error amplifier having a feedback input, an error output, and a reference input configured to receive a reference voltage;

a pass gate having a control gate coupled to the error output, a pass gate input configured to receive a supply voltage, and a pass gate output, wherein the pass gate output is coupled to the feedback input; and

a transient response accelerator (TRA) circuit coupled to the pass gate output and configured to apply, in response to a voltage drop on the pass gate output, a TRA boost to the control gate,

wherein the TRA comprises;

a pass gate kick transistor having a drain coupled to the control gate of the pass gate, and having a gate; and

a voltage change triggered control circuit having an input coupled by a coupling capacitor to the pass gate output and having a kick output that is coupled to the gate of the pass gate kick transistor,

wherein the voltage change triggered control circuit is configured to apply through the kick output, in response to a voltage drop on the pass gate output, a boost voltage to the gate of the pass gate kick transistor, at a magnitude corresponding to a rate of the voltage drop, and

wherein the pass gate kick transistor is configured to pull a voltage on the control gate of the pass gate, in response to the boost voltage, by a magnitude based, at least in part, on the boost voltage,

wherein the voltage change triggered control circuit includes;

a bias current source having an input configured for coupling to a power rail and having an output;

a bias control resistor coupled at one end to the output of the bias current source;

an NMOS transistor having a drain coupled to another end of the bias control resistor and to the output of the voltage change triggered control circuit, a gate coupled to the input of the voltage change triggered control circuit, and a source configured for coupling to a reference rail; and

a self-bias resistor coupling the drain of the NMOS transistor to the source of the NMOS transistor,

wherein the bias current source feeds a bias current through the bias control resistor and the NMOS transistor.

2. The transient response accelerated LDO regulator of claim 1, further comprising a compensation current source, coupled to the control gate of the pass gate.

3. The transient response accelerated LDO regulator of claim 1, wherein the self-bias resistor is a Class A self-bias resistor having a resistance that establishes at the gate of the NMOS transistor a bias voltage that biases the NMOS transistor as a Class A amplifier.

4. The transient response accelerated LDO regulator of claim 3, wherein the NMOS transistor and the pass gate kick transistor are structured to have substantially identical current-voltage characteristics.

5. The transient response accelerated LDO regulator of claim 4, wherein the bias current source is configured to feed the bias current as a quiescent current of the NMOS transistor, and wherein the bias control resistor has a resistance that provides, in response to the quiescent current of the NMOS transistor, a voltage drop that establishes a static bias voltage, at the kick output, that reduces a quiescent current of the pass gate kick transistor to the quiescent current of the NMOS transistor.

6. The transient response accelerated LDO regulator of claim 5, further comprising a compensation current source, coupled to the control gate of the pass gate.

7. The transient response accelerated LDO regulator of claim 4, wherein the pass gate kick transistor has a given threshold voltage (V_TH), and wherein the NMOS transistor is structured to have a threshold voltage that is substantially identical to V_TH.

8. The transient response accelerated LDO regulator of claim 7, wherein the bias current source is configured to feed the bias current as a quiescent current of the NMOS transistor, and wherein the bias control resistor has a resistance that provides, in response to the quiescent current of the NMOS transistor, a voltage drop that establishes a static bias voltage at the kick output that is within a range from slightly less than V_TH to approximately equal to V_TH.

9. The transient response accelerated LDO regulator of claim 8, further comprising a compensation current source, coupled to the control gate of the pass gate.

10. A method for providing a transient response accelerated low dropout (LDO) voltage regulation, comprising:

providing an error amplifier having a feedback input, an error output, and a reference input configured to receive a reference voltage;

providing a pass gate having a control gate coupled to the error output, a pass gate input configured to receive a supply voltage, and a pass gate output, wherein the pass gate output is coupled to the feedback input; and

providing a transient response accelerator (TRA) circuit coupled to the pass gate output and configured to apply, in response to a voltage drop on the pass gate output, a TRA boost to the control gate,

wherein the TRA circuit comprises;

a pass gate kick transistor having a drain coupled to the control gate of the pass gate, and having a gate; and

a voltage change triggered control circuit having an input coupled by a coupling capacitor to the pass gate output and having a kick output that is coupled to the gate of the pass gate kick transistor,

wherein the voltage change triggered control circuit is configured to apply through the kick output, in response to a voltage drop on the pass gate output, a boost voltage to the gate of the pass gate kick transistor, at a magnitude corresponding to a rate of the voltage drop,

wherein the pass gate kick transistor is configured to pull a voltage on the control gate of the pass gate, in response to the boost voltage, by a magnitude based, at least in part, on the boost voltage, and

wherein the voltage change triggered control circuit includes;

a bias current source having an input configured for coupling to a power rail and having an output;

a bias control resistor coupled at one end to the output of the bias current source;

an NMOS transistor having a drain coupled to another end of the bias control resistor and to the output of the voltage change triggered control circuit, a gate coupled to the input of the voltage change triggered control circuit, and a source configured for coupling to a reference rail; and

a self-bias resistor coupling the drain of the NMOS transistor to the source of the NMOS transistor,

wherein the bias current source feeds a bias current through the bias control resistor and the NMOS transistor.

11. The method of claim 10, further comprising providing a compensation current source, coupled to the control gate of the pass gate.

12. An apparatus for transient response accelerated low dropout (LDO) voltage regulation, comprising:

means for providing an error amplifier having a feedback input, an error output, and a reference input configured to receive a reference voltage;

means for providing a pass gate having a control gate coupled to the error output, an input configured to receive a supply voltage, and a pass gate output, wherein the pass gate output is coupled to the feedback input; and

means for providing a transient response accelerator (TRA) circuit coupled to the pass gate output and configured to apply, in response to a voltage drop on the pass gate output, a TRA boost to the control gate,

wherein the TRA circuit comprises;

a pass gate kick transistor having a drain coupled to the control gate of the pass gate, and having a gate; and

a voltage change triggered control circuit having an input coupled by a coupling capacitor to the pass gate output and having a kick output that is coupled to the gate of the pass gate kick transistor,

wherein the voltage change triggered control circuit is configured to apply through the kick output, in response to a voltage drop on the pass gate output, a boost voltage to the gate of the pass gate kick transistor, at a magnitude corresponding to a rate of the voltage drop,

wherein the pass gate kick transistor is configured to pull a voltage on the control gate of the pass gate, in response to the boost voltage, by a magnitude based, at least in part, on the boost voltage, and

wherein the voltage change triggered control circuit includes;

a bias current source having an input configured for coupling to a power rail and having an output;

a bias control resistor coupled at one end to the output of the bias current source;

an NMOS transistor having a drain coupled to another end of the bias control resistor and to the output of the voltage change triggered control circuit, a gate coupled to the input of the voltage change triggered control circuit, and a source configured for coupling to a reference rail; and

a self-bias resistor coupling the drain of the NMOS transistor to the source of the NMOS transistor,

wherein the bias current source feeds a bias current through the bias control resistor and the NMOS transistor.

13. A transient response accelerated low dropout (LDO) regulator, comprising:

an error amplifier having a feedback input, an error output, and a reference input configured to receive a reference voltage;

a pass gate having a control gate coupled to the error output, a pass gate input configured to receive a supply voltage, and a pass gate output, wherein the pass gate output is coupled to the feedback input; and

a transient response accelerator (TRA) circuit coupled to the pass gate output and configured to apply, in response to a voltage drop on the pass gate output, a TRA boost to the control gate,

wherein the TRA comprises;

a pass gate kick transistor having a drain coupled to the control gate of the pass gate, and having a gate; and

a voltage change triggered control circuit having an input coupled by a coupling capacitor to the pass gate output and having a kick output that is coupled to the gate of the pass gate kick transistor,

wherein the voltage change triggered control circuit includes;

an NMOS transistor having a drain coupled to the kick output, a gate coupled to the input of the voltage change triggered control circuit, and a source configured for coupling to a reference rail;

a bias control resistor having one end coupled to the drain of the NMOS transistor;

a PMOS transistor having a drain coupled to another end of the bias control resistor, a gate coupled to the gate of the NMOS transistor, and a source configured for coupling to a Vdd power rail; and

a self-bias resistor coupling the drain of the NMOS transistor to the source of the NMOS transistor.

14. The transient response accelerated LDO regulator of claim 13, wherein the self-bias resistor has a resistance that establishes at the gate of the NMOS transistor a bias voltage that biases the NMOS transistor as a Class A amplifier.

15. The transient response accelerated LDO regulator of claim 14, wherein the NMOS transistor and the pass gate kick transistor are structured to have substantially identical current-voltage characteristics.

16. The transient response accelerated LDO regulator of claim 15, wherein the bias control resistor has a resistance that provides a voltage drop, in response to a quiescent current of the NMOS transistor, that establishes a static bias voltage at the kick output that reduces a quiescent current of the pass gate kick transistor to the quiescent current of the NMOS transistor.

17. The transient response accelerated LDO regulator of claim 14, wherein the pass gate kick transistor has a given threshold voltage (V_TH), and wherein the NMOS transistor is structured to have a threshold voltage that is substantially identical to V_TH.

18. The transient response accelerated LDO regulator of claim 17, wherein the bias control resistor has a resistance that provides a voltage drop, in response to a quiescent current of the NMOS transistor, that establishes a static voltage at the kick output that is within a range from slightly less than V_TH to approximately equal to V_TH.

19. A transient response accelerated low dropout (LDO) regulator, comprising:

an error amplifier having a feedback input, an error output, and a reference input configured to receive a reference voltage;

a pass gate having a control gate coupled to the error output, a pass gate input configured to receive a supply voltage, and a pass gate output, wherein the pass gate output is coupled to the feedback input; and

a transient response accelerator (TRA) circuit coupled to the pass gate output and configured to apply, in response to a voltage drop on the pass gate output, a TRA boost to the control gate,

wherein the TRA comprises;

a pass gate kick transistor having a drain coupled to the control gate of the pass gate, and having a gate; and

a voltage change triggered control circuit having an input coupled by a coupling capacitor to the pass gate output and having a kick output that is coupled to the gate of the pass gate kick transistor,

wherein the voltage change triggered control circuit is configured to apply through the kick output, in response to a voltage drop on the pass gate output, a boost voltage to the gate of the pass gate kick transistor, at a magnitude corresponding to a rate of the voltage drop, and

wherein the pass gate kick transistor is configured to pull a voltage on the control gate of the pass gate, in response to the boost voltage, by a magnitude based, at least in part, on the boost voltage,

wherein the voltage change triggered control circuit comprises;

an inverter amplifier having an inverter input coupled by a coupling capacitor to the input of the voltage change triggered control circuit, and having an inverter output coupled to the kick output;

an inverter bias feedback resistor coupled between the inverter input and the inverter output; and

an inverter bias current source feeding a bias control current to the inverter input,

wherein the pass gate kick transistor has a current-voltage characteristic, and wherein the inverter bias current source has a control input, and further comprising;

a difference amplifier having one differential input coupled to the gate of the pass gate kick transistor, another differential input coupled to the kick output, and having an output coupled to the control input of the inverter bias current source;

a replica current bias circuit having a replica transistor, having a current-voltage characteristic that is substantially the same as the current-voltage characteristic of the pass gate kick transistor, and having a drain coupled to another differential input of the difference amplifier, a gate coupled to said drain, and a replica bias current source feeding a replica quiescent current to said drain, and

wherein the difference amplifier controls the inverter bias current source to set the magnitude of the bias control current having a magnitude that sets a quiescent current through the pass gate kick transistor substantially identical to the replica quiescent current.

20. The transient response accelerated LDO regulator of claim 19, wherein the inverter amplifier includes a complementary metal oxide (CMOS) inverter circuit, and wherein the inverter bias feedback resistor is a Class A bias resistor having a resistance that maintains the complementary metal oxide (CMOS) inverter circuit in a Class A mode of operation.