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Complementary metal-oxide-semiconductor device comprising silicon and germanium and method for manufacturing thereof

  • US 9,123,566 B2
  • Filed: 07/03/2013
  • Issued: 09/01/2015
  • Est. Priority Date: 07/03/2012
  • Status: Active Grant
First Claim
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1. A fin field-effect transistor (FinFET) complementary metal-oxide-semiconductor (CMOS) device, comprising:

  • a substrate;

    a buffer layer formed on the substrate, wherein the buffer layer comprises Si1-xGex, wherein x is greater than 0 and less than 0.5;

    one or more pMOS channel layer elements formed on the buffer layer, wherein each pMOS channel layer element comprises Si1-yGey, wherein y is greater than x;

    one or more nMOS channel layer elements formed on the buffer layer, wherein each nMOS channel layer element comprises Si1-zGez, wherein z is less than x;

    a first fin structure comprising the one or more pMOS channel layer elements;

    a second fin structure comprising the one or more nMOS channel layer elements; and

    further comprising at least one of;

    (i) a first elevated source-drain (E S/D) electrode formed adjacent to the one or more pMOS channel layer elements, wherein the first E S/D comprises Si1-pGep, and wherein p is greater than x, and a second E S/D formed adjacent to the one or more pMOS channel layer elements, wherein the second E S/D comprises Si1-kGek, and wherein k is greater than p;

    or(ii) a third elevated source-drain (E S/D) electrode formed adjacent to the one or more nMOS channel layer elements, wherein the first E S/D comprises Si1-ppGepp, and wherein pp is less than x, and a fourth E S/D formed adjacent to the one or more nMOS channel layer elements, wherein the second E S/D comprises Si1-kkGekk, and wherein kk is less than pp.

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