Method for manufacturing semiconductor device

• US 9,123,751 B2
• Filed: 05/27/2014
• Issued: 09/01/2015
• Est. Priority Date: 10/24/2008
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Ito, Shunichi, Hosoba, Miyuki, Suzawa, Hideomi, Sasagawa, Shinya, Muraoka, Taiga
• Primary Examiner(s): NHU, DAVID
• Application Number:
  US14/287,494
• Publication Number:
  US 20140273343A1
• Time in Patent Office: 462 Days
• Field of Search: 438/149, 438/159, 438/187, 438/9, 438/474, 438/267, 438/513, 438/680, 438/706, 438/745, 438/733, 438/257, 438/507, 438/602, 438/608, 257/E21.006, 257/E21.051, 257/E21.053, 257/E21.077, 257/E21.17, 257/E21.227, 257/E21.245, 257/E21.267, 257/E21.311, 257/E21.352
• US Class Current: 1/1
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1288 employing particular masking sequences or specially adapted masks, e.g. half-tone mask
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

An object is to manufacture a semiconductor device including an oxide semiconductor at low cost with high productivity in such a manner that a photolithography process is simplified by reducing the number of light-exposure masks. In a method for manufacturing a semiconductor device including a channel-etched inverted-staggered thin film transistor, an oxide semiconductor film and a conductive film are etched using a mask layer formed with the use of a multi-tone mask which is a light-exposure mask through which light is transmitted so as to have a plurality of intensities. In etching steps, a first etching step is performed by dry etching in which an etching gas is used, and a second etching step is performed by wet etching in which an etchant is used.

Claims

1. A method for manufacturing a semiconductor device, comprising:

forming a gate electrode layer over a substrate having an insulating surface;

stacking a gate insulating layer, an oxide semiconductor film, and a conductive film over the gate electrode layer;

forming a first mask layer over the gate insulating layer, the oxide semiconductor film, and the conductive film;

performing a first etching with the first mask layer to etch the oxide semiconductor film and the conductive film so that an oxide semiconductor layer and a conductive layer are formed;

forming a second mask layer by ashing the first mask layer; and

performing a second etching with the second mask layer to etch the oxide semiconductor layer and the conductive layer so that an oxide semiconductor layer having a depression, a source electrode layer, and a drain electrode layer are formed,

wherein the first mask layer is formed using a light-exposure mask,

wherein the first etching is dry etching with use of an etching gas,

wherein the second etching is wet etching with use of an etchant,

wherein the oxide semiconductor layer having the depression includes a region with a smaller thickness than a region overlapping with the source electrode layer or the drain electrode layer,

wherein each of the source electrode layer and the drain electrode layer including an inner edge opposed to each other,

wherein the oxide semiconductor layer having the depression comprises a first region overlapping with the inner edge of the source electrode layer, a second region overlapping with the inner edge of the drain electrode layer, and a third region between the first region and the second region,

wherein the third region comprises a slanted surface adjacent to one of the inner edges of the source electrode layer and the drain electrode layer, and

wherein a taper angle of the slanted surface is smaller than one of taper angles of the inner edges of the source electrode layer and the drain electrode layer.

2. The method for manufacturing a semiconductor device according to claim 1, wherein the oxide semiconductor film includes indium, gallium, and zinc.

3. The method for manufacturing a semiconductor device according to claim 1, wherein the etching gas includes chlorine.

4. The method for manufacturing a semiconductor device according to claim 3, wherein the etching gas further includes oxygen.

5. The method for manufacturing a semiconductor device according to claim 1, wherein an ammonia hydrogen peroxide mixture is used as the etchant in the second etching.

6. The method for manufacturing a semiconductor device according to claim 1, wherein a half-tone mask or a gray-tone mask is used as the light-exposure mask.

7. A method for manufacturing a semiconductor device, comprising:

forming a gate electrode layer over a substrate having an insulating surface;

stacking a gate insulating layer, a first oxide semiconductor film, a second oxide semiconductor film, and a conductive film over the gate electrode layer;

forming a first mask layer over the gate insulating layer, the first oxide semiconductor film, the second oxide semiconductor film, and the conductive film;

performing a first etching with the first mask layer to etch the first oxide semiconductor film, the second oxide semiconductor film, and the conductive film so that a first oxide semiconductor layer, a second oxide semiconductor layer, and a conductive layer are formed;

forming a second mask layer by ashing the first mask layer; and

performing a second etching with the second mask layer to etch the first oxide semiconductor layer, the second oxide semiconductor layer, and the conductive layer so that an oxide semiconductor layer having a depression, a source region, a drain region, a source electrode layer, and a drain electrode layer are formed,

wherein the first mask layer is formed using a light-exposure mask,

wherein the first etching is dry etching with use of an etching gas,

wherein the second etching is wet etching with use of an etchant,

wherein the oxide semiconductor layer having the depression includes a region with a smaller thickness than a region overlapping with the source region or the drain region,

wherein each of the source electrode layer and the drain electrode layer including an inner edge opposed to each other,

wherein the oxide semiconductor layer having the depression comprises a first region overlapping with the inner edge of the source electrode layer, a second region overlapping with the inner edge of the drain electrode layer, and a third region between the first region and the second region,

wherein the third region comprises a slanted surface adjacent to one of the inner edges of the source electrode layer and the drain electrode layer, and

wherein a taper angle of the slanted surface is smaller than one of taper angles of the inner edges of the source electrode layer and the drain electrode layer.

8. The method for manufacturing a semiconductor device according to claim 7, wherein each of the first oxide semiconductor film and the second oxide semiconductor film includes indium, gallium, and zinc.

9. The method for manufacturing a semiconductor device according to claim 7, wherein the first oxide semiconductor film has lower electrical conductivity than the second oxide semiconductor film.

10. The method for manufacturing a semiconductor device according to claim 7, wherein the etching gas includes chlorine.

11. The method for manufacturing a semiconductor device according to claim 10, wherein the etching gas further includes oxygen.

12. The method for manufacturing a semiconductor device according to claim 7, wherein an ammonia hydrogen peroxide mixture is used as the etchant in the second etching.

13. The method for manufacturing a semiconductor device according to claim 7, wherein the conductive layer is etched using an ammonia hydrogen peroxide mixture as the etchant and the first oxide semiconductor layer and the second oxide semiconductor layer are etched using a mixed solution of phosphoric acid, acetic acid, and nitric acid as the etchant in the second etching.

14. The method for manufacturing a semiconductor device according to claim 7, wherein a half-tone mask or a gray-tone mask is used as the light-exposure mask.