Semiconductor chip carriers with monolithically integrated quantum dot devices and method of manufacture thereof
First Claim
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1. A three-dimensional polycrystalline semiconductor material that forms a free electron gas characteristic of quantum wells, comprising a uniform three-dimensional assembly of granular quantum wells, with each granular quantum well further comprising:
- a semiconducting major ingredient forming individual crystalline grains having the same nominal maximum grain diameter between 20 nm and 50 nm and atomic-scale chemical uniformity throughout the interior of the granular quantum well; and
a minor ingredient enveloping the major ingredient within the granular quantum wells and forming energetic grain boundaries between the semiconducting major ingredients within adjacent crystalline grains;
wherein the assembly of three-dimensional granular quantum wells forming the polycrystalline semiconductor material has a uniform nanoscale microstructure and grain size; and
further wherein the free electron gas formed by polycrystalline semiconductor material extends to distances greater than the grain diameter in every direction.
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Abstract
A three-dimensional polycrystalline semiconductor material provides a major ingredient forming individual crystalline grains having a nominal maximum grain diameter less than or equal to 50 nm, and a minor ingredient forming boundaries between the individual crystalline grains.
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Citations
16 Claims
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1. A three-dimensional polycrystalline semiconductor material that forms a free electron gas characteristic of quantum wells, comprising a uniform three-dimensional assembly of granular quantum wells, with each granular quantum well further comprising:
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a semiconducting major ingredient forming individual crystalline grains having the same nominal maximum grain diameter between 20 nm and 50 nm and atomic-scale chemical uniformity throughout the interior of the granular quantum well; and a minor ingredient enveloping the major ingredient within the granular quantum wells and forming energetic grain boundaries between the semiconducting major ingredients within adjacent crystalline grains; wherein the assembly of three-dimensional granular quantum wells forming the polycrystalline semiconductor material has a uniform nanoscale microstructure and grain size; and further wherein the free electron gas formed by polycrystalline semiconductor material extends to distances greater than the grain diameter in every direction. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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- 12. A semiconductor carrier, comprising an active device including a polycrystalline semiconductor layer that is monolithically integrated into the semiconductor carrier, wherein the polycrystalline semiconductor layer is comprised of an assembly of granular quantum wells further comprising grains of a semiconducting major ingredient having atomic-scale chemical uniformity, nominally equal size, and maximal physical dimensions in the range of 20 nm to 50 nm that are enveloped by a grain boundary material of a minor ingredient that forms an energy barrier and is 2 nm to 10 nm thick, such that the quantum size effects within the granular quantum wells induce a free electron gas characteristic of a quantum well across all spatial directions of the assembly of granular quantum wells.
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