Semiconductor device
First Claim
1. A semiconductor device comprising a semiconductor layer laminate in which a plurality of semiconductor layers are laminated,said semiconductor layer laminate including a light receiving layer,said light receiving layer being grown by a metal-organic vapor phase epitaxy method,said light receiving layer having a cutoff wavelength of more than or equal to 3 μ
- m and less than or equal to 8 μ
m,the semiconductor device having a dark current density of less than or equal to 1×
10−
1 A/cm2 when a reverse bias voltage of 60 mV is applied at a temperature of −
140°
C.,wherein said light receiving layer has a carbon concentration of less than or equal 1×
1016 cm−
3.
1 Assignment
0 Petitions
Accused Products
Abstract
A semiconductor device includes a semiconductor layer laminate in which a plurality of semiconductor layers are laminated, the semiconductor layer laminate including a light receiving layer, the light receiving layer being grown by a metal-organic vapor phase epitaxy method, the light receiving layer having a cutoff wavelength of more than or equal to 3 μm and less than or equal to 8 μm, the semiconductor device having a dark current density of less than or equal to 1×10−1 A/cm2 when a reverse bias voltage of 60 mV is applied at a temperature of −140° C. Thereby, a semiconductor device which can receive light in a mid-infrared range and has a low dark current is provided.
16 Citations
10 Claims
-
1. A semiconductor device comprising a semiconductor layer laminate in which a plurality of semiconductor layers are laminated,
said semiconductor layer laminate including a light receiving layer, said light receiving layer being grown by a metal-organic vapor phase epitaxy method, said light receiving layer having a cutoff wavelength of more than or equal to 3 μ - m and less than or equal to 8 μ
m,the semiconductor device having a dark current density of less than or equal to 1×
10−
1 A/cm2 when a reverse bias voltage of 60 mV is applied at a temperature of −
140°
C.,wherein said light receiving layer has a carbon concentration of less than or equal 1×
1016 cm−
3. - View Dependent Claims (2, 3)
- m and less than or equal to 8 μ
-
4. A semiconductor device comprising a semiconductor layer laminate in which a plurality of semiconductor layers are laminated,
said semiconductor layer laminate including a light receiving layer, said light receiving layer having a cutoff wavelength of more than or equal to 3 μ - m and less than or equal to 8 μ
m,the semiconductor device having a dark current density of less than or equal to 1×
10−
4 A/cm2 when a reverse bias voltage of 60 mV is applied at a temperature of −
140°
C.,wherein said light receiving layer has a carbon concentration of less than or equal to 1×
1016 cm−
3. - View Dependent Claims (5, 6, 7, 8, 9, 10)
- m and less than or equal to 8 μ
Specification