Vertical cavity surface emitting laser with undoped top mirror

• US 9,124,069 B2
• Filed: 04/30/2012
• Issued: 09/01/2015
• Est. Priority Date: 10/01/2004
• Status: Active Grant

• Current Assignee: II-VI Delaware, Inc. (Coherent Corp.)
• Original Assignee: Finisar Corporation (II-VI Incorporated)
• Inventors: Johnson, Ralph H., Penner, R. Scott, Biard, James Robert
• Primary Examiner(s): Maldonado, Julio J
• Assistant Examiner(s): King, Joshua
• Application Number:
  US13/460,725
• Publication Number:
  US 20120213243A1
• Time in Patent Office: 1,219 Days
• US Class Current: 1/1
• CPC Class Codes: H01S 5/18308 having a special structure for lateral current or light confinement
• CPC Class Codes: H01S 5/18313 by oxidizing at least one of the DBR layers
• CPC Class Codes: H01S 5/1833 with more than one structure
• CPC Class Codes: H01S 5/18341 Intra-cavity contacts
• CPC Class Codes: H01S 5/18369 based on dielectric materials
• CPC Class Codes: H01S 5/2086 lateral etch control, e.g. mask induced
• CPC Class Codes: H01S 5/3095 Tunnel junction
• CPC Class Codes: H01S 5/3211 characterised by special cladding layers, e.g. details on band-discontinuities

Abstract

A VCSEL with undoped top mirror. The VCSEL is formed from an epitaxial structure deposited on a substrate, and a periodically doped conduction layer is coupled to the undoped top minor. A periodically doped spacer layer is coupled to an active region. An undoped bottom minor coupled to the periodically doped spacer layer. A first intracavity contact is coupled to the periodically doped conduction layer and a second intracavity contact is coupled to the periodically doped spacer layer.

Claims

1. A VCSEL formed on a substrate comprising:

an epitaxial structure having a laterally narrower mesa structure on a laterally wider base and having a longitudinal axis aligned with a direction of light emitted from the VCSEL;

the mesa structure with a top mesa surface and side mesa surface and containing an undoped top mirror;

the base comprising;

a periodically doped conduction layer coupled to the undoped top mirror and having a top surface extending from the mesa laterally away from the mesa side surface;

an active region coupled to the conduction layer;

an undoped bottom mirror between the active region and substrate; and

a periodically doped spacer layer between the active region and undoped bottom mirror;

a dielectric material on the top surface of the periodically doped conduction layer and having a tapered profile shape from a longitudinally thinner inner portion proximal the mesa side surface to a longitudinally thicker outer portion distal the mesa side surface;

an isolation trench extending from the top surface of the periodically doped conduction layer to the periodically doped spacer layer and having the dielectric material so as to laterally bound the active region;

a first intracavity contact coupled to the periodically doped conduction layer and the undoped top mirror, the first intracavity contact covering a portion of the top mesa surface and extending over the side mesa surface, periodically doped conduction layer, and dielectric material to the longitudinally thicker outer portion; and

a second intracavity contact having a portion in the isolation trench and being coupled to the periodically doped spacer layer.

2. The VCSEL of claim 1, wherein the periodically doped conduction layer is doped oppositely from the periodically doped spacer layer.

3. The VCSEL of claim 2, wherein the periodically doped conduction layer includes two or three periodically doped layers that are more heavily doped at electric field minima than when not zero so as to provide a low resistance lateral current path for directing current to a central region of the active region.

4. The VCSEL of claim 3, wherein the two or three periodically doped layers are heavily p-doped between 5×

10¹⁹ to 1×

10²⁰.

5. The VCSEL of claim 1, wherein the undoped top mirror includes alternating layers of GaAs and AlGaAs.

6. The VCSEL of claim 1, wherein the undoped top mirror has alternating layers and is substantially non-graded between the alternating layers.

7. The VCSEL of claim 6, comprising the undoped top mirror including alternating layers of GaAs and AlGaAs.

8. The VCSEL of claim 7, comprising two or three periodically doped conduction layers coupled to the undoped top mirror and a p-type conduction layer region between the periodically doped conduction layers and the active region, and the periodically doped spacer layer is n-doped.

9. The VCSEL of claim 8, the active region bounded laterally by proton bombarded isolation implants.

10. The VCSEL of claim 9, the undoped bottom mirror is non-graded between layers of the undoped bottom mirror.

11. The VCSEL of claim 1, wherein the undoped top mirror includes alternating layers of GaAs and AlAs and is substantially non-graded therebetween, and an oxide seals the undoped top mirror.

12. The VCSEL of claim 1, wherein the undoped bottom mirror is non-graded between layers of the undoped bottom mirror.

13. The VCSEL of claim 1, comprising an oxide layer forming an aperture, the oxide layer in the conduction layer region.

14. The VCSEL of claim 1, comprising:

the undoped top mirror including alternating layers of GaAs and AlGaAs;

two or three periodically doped conduction layers coupled to the undoped top mirror;

a p-type conduction layer region between the periodically doped conduction layers and the active region;

the active region bounded laterally by proton bombarded isolation implants;

the periodically doped spacer layer being n-doped; and

the undoped bottom mirror is devoid of ramps between layers of the undoped bottom mirror.

15. The VCSEL of claim 14, comprising:

the periodically doped conduction layer includes two or three periodically doped layers that are more heavily p-doped between 5×

10¹⁹ to 1×

10²⁰ at electric field minima than when not zero so as to provide a low resistance lateral current path for directing current to a central region of the active region; and

the AlGaAs of the undoped top mirror includes Al from about 70-100%.

16. The VCSEL of claim 1, comprising:

an oxide sealing the undoped top mirror;

the undoped top mirror including alternating layers of GaAs and AlAs;

two or three periodically doped conduction layers coupled to the undoped top mirror;

a p-type conduction layer region between the periodically doped conduction layers and the active region;

the active region bounded laterally by proton bombarded isolation implants;

the periodically doped spacer layer being n-doped;

a portion of the top mesa surface not covered by the first intracavity contact; and

the undoped bottom mirror is devoid of ramps between layers of the undoped bottom mirror.

17. The VCSEL of claim 16, wherein the periodically doped conduction layer includes two or three periodically doped layers that are more heavily p-doped between 5×

10¹⁹ to 1×

10²⁰ at electric field minima than when not zero so as to provide a low resistance lateral current path for directing current to a central region of the active region.

18. The VCSEL of claim 1, comprising isolation implants laterally bounding the active region.

19. A VCSEL formed on a substrate comprising:

an epitaxial structure having a laterally narrower mesa structure on a laterally wider base and having a longitudinal axis aligned with a direction of light emitted from the VCSEL;

the mesa structure with a top mesa surface and side mesa surface and containing an undoped top semiconductor mirror having alternating layers of GaAs and AlGaAs;

the base comprising;

a p-type conduction layer region having two or three periodically doped conduction layers coupled to the undoped top mirror, which two or three periodically doped conduction layers are more heavily p- doped between 5×

10¹⁹ to 1×

10²⁰ at electric field minima than when not zero so as to provide a low resistance lateral current path for directing current to a central region of an active region, the conduction layer region having a top surface extending from the mesa laterally away from the mesa side surface;

the active region coupled to the p-type conduction layer region;

an n-doped periodically doped spacer layer coupled to the active region; and

an undoped bottom mirror coupled to the n-doped periodically doped spacer layer, wherein the n-doped periodically doped spacer layer is between the active region and undoped bottom mirror;

a dielectric material on the top surface of the conduction layer region and having a tapered profile shape from a longitudinally thinner inner portion proximal the mesa side surface to a longitudinally thicker outer portion distal the mesa side surface;

an isolation trench extending from the top surface of the p-type conduction layer to the n-doped periodically doped spacer layer and having the dielectric material so as to laterally bound the active region;

a first intracavity contact coupled to one of the two or three periodically doped conduction layers and the undoped top semiconducting mirror, the first intracavity contact covering a portion of the top mesa surface and extending over the side mesa surface, periodically doped conduction layers, and dielectric material; and

a second intracavity contact having a portion in the isolation trench and being coupled to the n-type periodically doped spacer layer.

20. A VCSEL formed on a substrate comprising:

an epitaxial structure having a laterally narrower mesa structure on a laterally wider base and having a longitudinal axis aligned with a direction of light emitted from the VCSEL;

the mesa structure with a top mesa surface and side mesa surface and containing an undoped top semiconductor mirror having alternating layers of GaAs and AlAs under an oxide cap;

the base comprising;

a p-type conduction layer region having two or three periodically doped conduction layers coupled to the undoped top mirror, which two or three periodically doped conduction layers are more heavily p-doped between 5×

10¹⁹ to 1×

10²⁰ at electric field minima than when not zero so as to provide a low resistance lateral current path for directing current to a central region of an active region, the conduction layer region having a top surface extending from the mesa laterally away from the mesa side surface;

the active region coupled to the p-type conduction layer region;

an n-doped periodically doped spacer layer coupled to the active region; and

an undoped bottom mirror coupled to the n-doped periodically doped spacer layer, wherein the n-doped periodically doped spacer layer is between the active region and undoped bottom mirror;

a dielectric material on the periodically doped conduction layer region and having a tapered profile shape from a longitudinally thinner inner portion proximal the mesa side surface to a longitudinally thicker outer portion distal the mesa side surface;

an isolation trench extending from the top surface of the p-type conduction layer to the n-doped periodically doped spacer layer and having the dielectric material so as to laterally bound the active region;

a first intracavity contact coupled to one of the two or three periodically doped conduction layers and the undoped top semiconductor mirror, the first intracavity contact covering a portion of the top mesa surface and extending over the side mesa surface, periodically doped conduction layers, and dielectric material; and

a second intracavity contact coupled to the n-type periodically doped spacer layer.