Thermal evaporation process for manufacture of solid state battery devices
First Claim
1. A method for manufacturing a cathode device for a solid-state battery device using a flash process, the method comprising:
- providing a substrate including a surface region, the substrate being configured on a transfer device;
continuously applying at a controlled rate a cathode source comprising a metal oxide onto a hot wall reactor subjected to thermal energy to cause a portion of the cathode source to evaporate into a vapor phase within a time period of less than about one second to substantially evaporate the portion of the cathode source free from formation of undesirable metal oxide species;
forming a thickness of metal oxide material overlying the surface region at a rate of about 100 to 10,000 Angstroms per second per 100 square centimeters by condensing the vapor phase of the metal oxide species as the substrate moves either in a first direction or a second direction;
subjecting the thickness of the metal oxide material to an ion source comprising an oxygen species, an argon species, and a nitrogen species while the thickness of metal oxide material is being formed and/or after the thickness of metal oxide material has been formed, the ion source including an ion beam having a power to cause an electrical conductivity of the thickness of the metal oxide material to increase from about 10−
8 Siemens/meter to about 10−
5 Siemens/meter and to cause the thickness of the metal oxide material to be doped with approximately 4% nitrogen; and
maintaining the surface region in a vacuum environment from about 10−
6 to 10−
4 Torr during the formation of the thickness of the metal oxide material.
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Accused Products
Abstract
A method for manufacturing a solid-state battery device. The method can include providing a substrate within a process region of an apparatus. A cathode source and an anode source can be subjected to one or more energy sources to transfer thermal energy into a portion of the source materials to evaporate into a vapor phase. An ionic species from an ion source can be introduced and a thickness of solid-state battery materials can be formed overlying the surface region by interacting the gaseous species derived from the plurality of electrons and the ionic species. During formation of the thickness of the solid-state battery materials, the surface region can be maintained in a vacuum environment from about 10-6 to 10-4 Torr. Active materials comprising cathode, electrolyte, and anode with non-reactive species can be deposited for the formation of modified modulus layers, such a void or voided porous like materials.
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Citations
18 Claims
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1. A method for manufacturing a cathode device for a solid-state battery device using a flash process, the method comprising:
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providing a substrate including a surface region, the substrate being configured on a transfer device; continuously applying at a controlled rate a cathode source comprising a metal oxide onto a hot wall reactor subjected to thermal energy to cause a portion of the cathode source to evaporate into a vapor phase within a time period of less than about one second to substantially evaporate the portion of the cathode source free from formation of undesirable metal oxide species; forming a thickness of metal oxide material overlying the surface region at a rate of about 100 to 10,000 Angstroms per second per 100 square centimeters by condensing the vapor phase of the metal oxide species as the substrate moves either in a first direction or a second direction; subjecting the thickness of the metal oxide material to an ion source comprising an oxygen species, an argon species, and a nitrogen species while the thickness of metal oxide material is being formed and/or after the thickness of metal oxide material has been formed, the ion source including an ion beam having a power to cause an electrical conductivity of the thickness of the metal oxide material to increase from about 10−
8 Siemens/meter to about 10−
5 Siemens/meter and to cause the thickness of the metal oxide material to be doped with approximately 4% nitrogen; andmaintaining the surface region in a vacuum environment from about 10−
6 to 10−
4 Torr during the formation of the thickness of the metal oxide material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method for manufacturing a cathode device for a solid-state battery device using a flash process, the method comprising:
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providing a substrate including a surface region, the substrate being configured on a transfer device; continuously applying at a controlled rate a cathode source comprising a metal oxide onto a hot wall reactor subjected to thermal energy to cause a portion of the cathode source to evaporate into a vapor phase within a time period of less than about one second to substantially evaporate the portion of the cathode source free from formation of undesirable metal oxide species; forming a thickness of metal oxide material overlying the surface region by condensing the gaseous species as the substrate moves either in a first direction or a second direction, and at a rate of about 100 to 10,000 Angstroms per second per 100 square centimeters; subjecting the thickness of the metal oxide material to an ion source comprising an oxygen species, an argon species, and a nitrogen species while the thickness of metal oxide material is being formed and/or after the thickness of metal oxide material has been formed in order to dope the thickness of the metal oxide material with approximately 4% nitrogen, which causes an electrical conductivity of the thickness of the metal oxide material to increase from about 10−
8 Siemens/meter to about 10−
5 Siemens/meter;maintaining the surface region in a vacuum environment from about 10−
6 to 10−
4 Torr during the formation of the thickness of the metal oxide material. - View Dependent Claims (15, 16, 17)
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18. A method for manufacturing a cathode device for a solid-state battery device using a flash process comprising:
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providing a substrate including a surface region, the substrate being configured on a transfer device for a roll to roll process; continuously applying thermal energy from a hot wall reactor region at a temperature ranging from about 600 to 1200 Degrees Centigrade to a cathode source comprising a metal oxide species to cause a portion of the cathode source to evaporate into a vapor phase within a time period of less than about one second to substantially evaporate the portion of the cathode source free from formation of undesirable metal oxide species; forming a thickness of metal oxide material overlying the surface region by condensing the gaseous species as the substrate moves either in a first direction or a second direction, and at a rate of about 100 to 10,000 Angstroms per second per 100 square centimeters; subjecting the thickness of the metal oxide material to an ion source at an energy of 100 eV to 400 eV and comprising an oxygen species, an argon species, and a nitrogen species while the thickness of metal oxide material is being formed and/or after the thickness of metal oxide material has been formed, in order to dope the thickness of the metal oxide material with approximately 4% nitrogen, which causes an electrical conductivity of the thickness of the metal oxide material to increase from about 10−
8 Siemens/meter to about 10−
5 Siemens/meter;maintaining the surface region in a vacuum environment from about 10−
6 to 10−
4 Torr during the formation of the thickness of the metal oxide material; andmoving the substrate in a continuous manner while the cathode source is continuously applied to the hot wall reactor region to evaporate the cathode source into the vapor phase.
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Specification