Module and assembly with dual DC-links for three-level NPC applications
First Claim
1. A method of manufacture, comprising:
- coupling a collector of a first Insulated Gate Bipolar Transistor (IGBT) to a first power terminal;
coupling an emitter of the first IGBT to a third power terminal;
coupling an anode of a diode to the emitter of the first IGBT;
coupling a cathode of the diode to the collector of the first IGBT;
providing a DC-link between a second power terminal and a fourth power terminal, wherein the DC-link comprises a pair of IGBTs coupled together in a common collector configuration; and
encapsulating the first IGBT, the diode, and the DC-link in a first power semiconductor module package, wherein the first, second, third and fourth power terminals are external terminals of the first power semiconductor module package.
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Accused Products
Abstract
A power semiconductor module has four power terminals. An IGBT has a collector connected to the first power terminal and an emitter coupled to the third power terminal. An anti-parallel diode is coupled in parallel with the IGBT. A DC-link is connected between the second and fourth power terminals. The DC-link may involve two diodes and two IGBTs, where the IGBTs are connected in a common collector configuration. The first and second power terminals are disposed in a first line along one side of the module, and the third and fourth power terminals are disposed in a second line along the opposite side of the module. Two identical instances of the module can be interconnected together to form a three-level NPC phase leg having low stray inductances, where the phase leg has two parallel DC-links.
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Citations
20 Claims
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1. A method of manufacture, comprising:
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coupling a collector of a first Insulated Gate Bipolar Transistor (IGBT) to a first power terminal; coupling an emitter of the first IGBT to a third power terminal; coupling an anode of a diode to the emitter of the first IGBT; coupling a cathode of the diode to the collector of the first IGBT; providing a DC-link between a second power terminal and a fourth power terminal, wherein the DC-link comprises a pair of IGBTs coupled together in a common collector configuration; and encapsulating the first IGBT, the diode, and the DC-link in a first power semiconductor module package, wherein the first, second, third and fourth power terminals are external terminals of the first power semiconductor module package. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method, comprising:
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coupling a collector of a first Insulated Gate Bipolar Transistor (IGBT) to a first power terminal; coupling an emitter of the first IGBT to a third power terminal; coupling an anode of a diode to the emitter of the first IGBT; coupling a cathode of the diode to the collector of the first IGBT; providing a DC-link between a second power terminal and a fourth power terminal, wherein the DC-link comprises a second IGBT and a third IGBT coupled together in a common collector configuration; mounting the first IGBT, the second IGBT and the third IGBT on a substrate, wherein the substrate is a part of a power semiconductor module package; and encapsulating the first IGBT, the second IGBT, the third IGBT and the diode in the power semiconductor module package, wherein the first, second, third and fourth power terminals are external terminals of the first power semiconductor module package. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A method, comprising:
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coupling a collector of a first Insulated Gate Bipolar Transistor (IGBT) to a first power terminal; coupling an emitter of the first IGBT to a third power terminal; coupling an anode of a diode to the emitter of the first IGBT; coupling a cathode of the diode to the collector of the first IGBT, wherein the first IGBT and the diode are the only devices coupled between the first power terminal and the third power terminal; providing a DC-link between a second power terminal and a fourth power terminal, wherein the DC-link comprises a second IGBT and a third IGBT coupled together in a common collector configuration; mounting the first IGBT, the second IGBT and the third IGBT on a substrate, wherein the substrate is a part of a power semiconductor module package; and encapsulating the first IGBT, the second IGBT, the third IGBT and the diode in the power semiconductor module package, wherein the first, second, third and fourth power terminals are external terminals of the first power semiconductor module package.
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Specification