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Module and assembly with dual DC-links for three-level NPC applications

  • US 9,129,824 B2
  • Filed: 08/03/2014
  • Issued: 09/08/2015
  • Est. Priority Date: 03/08/2013
  • Status: Active Grant
First Claim
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1. A method of manufacture, comprising:

  • coupling a collector of a first Insulated Gate Bipolar Transistor (IGBT) to a first power terminal;

    coupling an emitter of the first IGBT to a third power terminal;

    coupling an anode of a diode to the emitter of the first IGBT;

    coupling a cathode of the diode to the collector of the first IGBT;

    providing a DC-link between a second power terminal and a fourth power terminal, wherein the DC-link comprises a pair of IGBTs coupled together in a common collector configuration; and

    encapsulating the first IGBT, the diode, and the DC-link in a first power semiconductor module package, wherein the first, second, third and fourth power terminals are external terminals of the first power semiconductor module package.

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