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Silicon and silicon germanium nanowire structures

  • US 9,129,829 B2
  • Filed: 05/09/2014
  • Issued: 09/08/2015
  • Est. Priority Date: 12/01/2010
  • Status: Active Grant
First Claim
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1. A method of forming a nanowire device comprising:

  • forming alternating layers of an epitaxial silicon material on epitaxial silicon germanium material on a substrate;

    forming fin structures by etching the alternating layers and forming trenches adjacent to the fin structures;

    forming spacers across and on the fin structures;

    removing a portion of the fin structures from source/drain regions on the substrate;

    filling a gap in the spacers that is adjacent to the fin structures with a second spacer;

    forming source/drain structures on the source/drain regions, wherein the source/drain regions are adjacent the spacers;

    removing one of the silicon and the epitaxial silicon germanium layers from the fin structures disposed between the spacers.

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