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Metal silicide, metal germanide, methods for making the same

  • US 9,129,897 B2
  • Filed: 04/20/2012
  • Issued: 09/08/2015
  • Est. Priority Date: 12/19/2008
  • Status: Active Grant
First Claim
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1. A method for silicidation, comprising:

  • providing a substrate having at least one exposed silicon region;

    depositing an interface layer on the exposed silicon region, wherein the interface layer is a material different from that of the exposed silicon region;

    depositing by atomic layer deposition (ALD) or CVD a metal oxide film over the interface layer; and

    heating the substrate to form a metal silicide film over the exposed silicon regions using metal from the metal oxide film and silicon from the exposed silicon region.

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