Semiconductor device and method for manufacturing the same

• US 9,129,997 B2
• Filed: 07/22/2014
• Issued: 09/08/2015
• Est. Priority Date: 12/28/2010
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Primary Examiner(s): Nguyen, Thinh T
• Application Number:
  US14/337,599
• Publication Number:
  US 20140335652A1
• Time in Patent Office: 413 Days
• Field of Search: 257/43, 257/57, 257/16, 257/E29.068, 257/E21.409, 257/22, 257/24, 438/85, 438/86, 438/104, 438/754
• US Class Current: 1/1
• CPC Class Codes: H01L 21/02472 Oxides
• CPC Class Codes: H01L 21/02488 Insulating materials
• CPC Class Codes: H01L 21/02502 consisting of two layers
• CPC Class Codes: H01L 27/127 with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
• CPC Class Codes: H01L 29/247 Amorphous materials
• CPC Class Codes: H01L 29/66742 Thin film unipolar transistors
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78618 characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure silicide contacts, electrodes in general H01L29/458
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78693 the semiconducting oxide being amorphous

Abstract

A miniaturized semiconductor device including a transistor in which a channel formation region is formed using an oxide semiconductor film and variation in electric characteristics due to a short-channel effect is suppressed is provided. In addition, a semiconductor device whose on-state current is improved is provided. A semiconductor device is provided with an oxide semiconductor film including a pair of second oxide semiconductor regions which are amorphous regions and a first oxide semiconductor region located between the pair of second oxide semiconductor regions, a gate insulating film, and a gate electrode provided over the first oxide semiconductor region with the gate insulating film interposed therebetween. Hydrogen or a rare gas is added to the second oxide semiconductor regions.

Claims

1. A method for manufacturing a semiconductor device, comprising the steps of:

forming an oxide semiconductor film over an insulating surface;

performing heat treatment on the oxide semiconductor film, wherein the heated oxide semiconductor film comprises a crystalline region whose c-axis is aligned in a direction perpendicular to a surface of the oxide semiconductor film;

forming a gate insulating film covering a side surface of the oxide semiconductor film;

forming a gate electrode over the gate insulating film; and

forming a first oxide semiconductor region and a pair of second oxide semiconductor regions with the first oxide semiconductor region therebetween in the oxide semiconductor film, wherein the pair of second oxide semiconductor regions are formed by adding ions to the oxide semiconductor film with a mask that is the gate electrode.

2. The method for manufacturing the semiconductor device according to claim 1,

wherein the pair of second oxide semiconductor regions are a source region and a drain region, and

wherein the first oxide semiconductor region is a channel region.

3. The method for manufacturing the semiconductor device according to claim 1, wherein the oxide semiconductor film comprises at least two elements selected from the group of consisting of In, Ga, Sn, and Zn.

4. The method for manufacturing the semiconductor device according to claim 1, wherein each of the ions is one element selected from the group consisting of rare gas elements, and hydrogen.

5. The method for manufacturing the semiconductor device according to claim 4, wherein a concentration of the ions in the pair of second oxide semiconductor regions is higher than or equal to 5×

10¹⁸ atoms/cm³ and lower than or equal to 1×

10²² atoms/cm³.

6. The method for manufacturing the semiconductor device according to claim 1, wherein the gate electrode overlaps with the first oxide semiconductor region and does not overlap with the pair of second oxide semiconductor regions.

7. The method for manufacturing the semiconductor device according to claim 1, wherein the oxide semiconductor film comprises an In—

Ga—

Zn—

O-based oxide semiconductor.

8. The method for manufacturing the semiconductor device according to claim 1, wherein the oxide semiconductor film is a non-single-crystal.

18. The method for manufacturing the semiconductor device according to claim 1, wherein rare gas ions are added to the oxide semiconductor film through the gate insulating film.

9. A method for manufacturing a semiconductor device, comprising the steps of:

forming an oxide semiconductor film;

performing heat treatment on the oxide semiconductor film, wherein the heated oxide semiconductor film comprises a crystalline region whose c-axis is aligned in a direction perpendicular to a surface of the oxide semiconductor film;

forming a gate insulating film covering a side surface of the oxide semiconductor film,

forming a first oxide semiconductor region and a pair of second oxide semiconductor regions with the first oxide semiconductor region therebetween in the oxide semiconductor film, wherein the pair of second oxide semiconductor regions are formed by adding ions to the oxide semiconductor film with a mask.

10. The method for manufacturing the semiconductor device according to claim 9,

wherein the pair of second oxide semiconductor regions are a source region and a drain region, and

wherein the first oxide semiconductor region is a channel region.

11. The method for manufacturing the semiconductor device according to claim 9, wherein the oxide semiconductor film comprises at least two elements selected from the group of consisting of In, Ga, Sn, and Zn.

12. The method for manufacturing the semiconductor device according to claim 9, wherein each of the ions is one element selected from the group consisting of rare gas elements.

13. The method for manufacturing the semiconductor device according to claim 12, wherein a concentration of the ions in the pair of second oxide semiconductor regions is higher than or equal to 5×

10¹⁸ atoms/cm³ and lower than or equal to 1×

10²² atoms/cm³.

14. The method for manufacturing the semiconductor device according to claim 9, further comprising the step of:

forming a source electrode and a drain electrode over the oxide semiconductor film.

15. The method for manufacturing the semiconductor device according to claim 9, further comprising the step of:

forming a gate electrode over the gate insulating film,

wherein rare gas ions are added to the oxide semiconductor film with the mask that is the gate electrode through the gate insulating film.

16. The method for manufacturing the semiconductor device according to claim 9, wherein the oxide semiconductor film comprises an In—

Ga—

Zn—

O-based oxide semiconductor.

17. The method for manufacturing the semiconductor device according to claim 9, wherein the oxide semiconductor film is a non-single-crystal.