Display device
First Claim
1. A display device comprising:
- a substrate;
a scan line;
a signal line intersecting with the scan line over the substrate;
a pixel portion in which pixel electrodes are arranged in matrix; and
a first non-linear element provided over the substrate in a region outside the pixel portion,wherein the pixel portion comprises a thin film transistor in which a channel formation region is in a first oxide semiconductor layer,wherein the thin film transistor comprises;
a gate electrode which is connected to the scan line;
a first wiring layer which is connected to the signal line and the first oxide semiconductor layer; and
a second wiring layer which is connected to one of the pixel electrodes and the first oxide semiconductor layer,wherein the first non-linear element comprises;
a gate electrode;
a second oxide semiconductor layer over the gate electrode of the first non-linear element;
a channel protective layer covering a region which overlaps with a channel formation region of the second oxide semiconductor layer; and
a first wiring layer and a second wiring layer being over the channel protective layer and the gate electrode of the first non-linear element,wherein the gate electrode of the first non-linear element is connected to the scan line,wherein one of the first wiring layer and the second wiring layer of the first non-linear element is directly connected to a wiring in the same layer as the gate electrode of the first non-linear element, andwherein at least one of the first oxide semiconductor layer and the second oxide semiconductor layer includes a nanocrystal.
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Accused Products
Abstract
In order to take advantage of the properties of a display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area are necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer over the gate insulating film; a channel protective layer covering a region which overlaps with a channel formation region of the first oxide semiconductor layer; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and over the first oxide semiconductor layer. The gate electrode is connected to a scan line or a signal line, the first wiring layer or the second wiring layer is directly connected to the gate electrode.
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Citations
21 Claims
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1. A display device comprising:
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a substrate; a scan line; a signal line intersecting with the scan line over the substrate; a pixel portion in which pixel electrodes are arranged in matrix; and a first non-linear element provided over the substrate in a region outside the pixel portion, wherein the pixel portion comprises a thin film transistor in which a channel formation region is in a first oxide semiconductor layer, wherein the thin film transistor comprises; a gate electrode which is connected to the scan line; a first wiring layer which is connected to the signal line and the first oxide semiconductor layer; and a second wiring layer which is connected to one of the pixel electrodes and the first oxide semiconductor layer, wherein the first non-linear element comprises; a gate electrode; a second oxide semiconductor layer over the gate electrode of the first non-linear element; a channel protective layer covering a region which overlaps with a channel formation region of the second oxide semiconductor layer; and a first wiring layer and a second wiring layer being over the channel protective layer and the gate electrode of the first non-linear element, wherein the gate electrode of the first non-linear element is connected to the scan line, wherein one of the first wiring layer and the second wiring layer of the first non-linear element is directly connected to a wiring in the same layer as the gate electrode of the first non-linear element, and wherein at least one of the first oxide semiconductor layer and the second oxide semiconductor layer includes a nanocrystal. - View Dependent Claims (8, 11, 13, 16, 18)
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2. A display device comprising:
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a substrate; a scan line over the substrate; a signal line intersecting with the scan line over the substrate; a pixel portion in which pixel electrodes are arranged in matrix; a gate driver; and a first element and a second element between the pixel portion and the gate driver, wherein the first element comprises a first terminal being a gate, a second terminal, and a third terminal, wherein the second element comprises a fourth terminal being a gate, a fifth terminal, and a sixth terminal, wherein the pixel portion comprises a thin film transistor comprising an oxide semiconductor layer, wherein the first terminal is connected to the second terminal and the scan line, the second terminal is connected to the scan line, and the third terminal is connected to a wiring, wherein the fourth terminal is connected to the fifth terminal and the wiring, the fifth terminal is connected to the wiring, and the sixth terminal is connected to the scan line, and wherein each of the first element and the second element comprises an oxide semiconductor layer including a nanocrystal. - View Dependent Claims (3, 4, 9, 12, 14, 17, 19, 20)
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5. A computer comprising:
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a display device comprising; a substrate; a scan line over the substrate; a signal line intersecting with the scan line over the substrate; a pixel portion in which pixel electrodes are arranged in matrix; a gate driver; and a first element and a second element between the pixel portion and the gate driver, wherein the first element comprises a first terminal being a gate, a second terminal, and a third terminal, wherein the second element comprises a fourth terminal being a gate, a fifth terminal, and a sixth terminal, wherein the pixel portion comprises a thin film transistor comprising an oxide semiconductor layer, wherein the first terminal is connected to the second terminal and the scan line, and the second terminal is connected to the scan line, and the third terminal is connected to a wiring, wherein the fourth terminal is connected to the fifth terminal and the wiring, the fifth terminal is connected to the wiring, and the sixth terminal is connected to the scan line, and wherein each of the first element and the second element comprises an oxide semiconductor layer and the oxide semiconductor layer including a nanocrystal. - View Dependent Claims (6, 7, 10, 15, 21)
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Specification