Diode for a printable composition

• US 9,130,124 B2
• Filed: 01/25/2014
• Issued: 09/08/2015
• Est. Priority Date: 05/31/2007
• Status: Active Grant

• Current Assignee: NthDegree Technologies Worldwide Inc.
• Original Assignee: NthDegree Technologies Worldwide Inc.
• Inventors: Lowenthal, Mark David, Ray, William Johnstone, Shotton, Neil O., Blanchard, Richard A., Oraw, Brad
• Primary Examiner(s): Guharay, Karabi
• Application Number:
  US14/164,153
• Publication Number:
  US 20140138666A1
• Time in Patent Office: 591 Days
• Field of Search: 313/498, 257/99, 257/81, 257/40
• US Class Current: 1/1
• CPC Class Codes: H01L 21/561 Batch processing
• CPC Class Codes: H01L 2224/24051 Conformal with the semiconductor or solid-state device
• CPC Class Codes: H01L 2224/24101 Connecting bonding areas at the same height
• CPC Class Codes: H01L 2224/24137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/24226 the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/73267 Layer and HDI connectors
• CPC Class Codes: H01L 2224/82 by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
• CPC Class Codes: H01L 2224/82138 the guiding structures being at least partially left in the finished device
• CPC Class Codes: H01L 2224/83 using a layer connector
• CPC Class Codes: H01L 2224/83138 the guiding structures being at least partially left in the finished device
• CPC Class Codes: H01L 2224/83851 being an anisotropic conductive adhesive
• CPC Class Codes: H01L 2224/95101 in a liquid medium
• CPC Class Codes: H01L 2224/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 24/24 of an individual high density interconnect connector
• CPC Class Codes: H01L 24/83 using a layer connector
• CPC Class Codes: H01L 24/95 at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/09701 Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/13033 : TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact
• CPC Class Codes: H01L 2924/13034 : Silicon Controlled Rectifier [SCR]
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/1306 : Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/13062 : Junction field-effect transistor [JFET]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 31/022408 : for devices characterised by at least one potential jump barrier or surface barrier
• CPC Class Codes: H01L 31/03044 : comprising a nitride compounds, e.g. GaN
• CPC Class Codes: H01L 31/035281 : Shape of the body
• CPC Class Codes: H01L 31/0475 : PV cell arrays made by cells in a planar, e.g. repetitive, configuration on a single semiconductor substrate; PV cell microarrays PV modules composed of a plurality of thin film solar cells deposited on the same substrate H01L31/046
• CPC Class Codes: H01L 31/048 : Encapsulation of modules
• CPC Class Codes: H01L 31/0504 : specially adapted for series or parallel connection of solar cells in a module
• CPC Class Codes: H01L 31/1852 : comprising a growth substrate not being an AIIIBV compound
• CPC Class Codes: H01L 31/1856 : comprising nitride compounds, e.g. GaN
• CPC Class Codes: H01L 33/20 : with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/38 : with a particular shape
• CPC Class Codes: H01L 33/48 : characterised by the semiconductor body packages
• CPC Class Codes: H10K 50/80 : Constructional details
• CPC Class Codes: H10K 50/805 : Electrodes
• CPC Class Codes: H10K 59/90 : Assemblies of multiple devices comprising at least one organic light-emitting element
• CPC Class Codes: H10K 71/00 : Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: H10K 71/40 : Thermal treatment, e.g. annealing in the presence of a solvent vapour
• CPC Class Codes: Y02E 10/50 : Photovoltaic [PV] energy
• CPC Class Codes: Y02E 10/544 : Solar cells from Group III-V materials
• CPC Class Codes: Y02P 70/50 : Manufacturing or production processes characterised by the final manufactured product

Abstract

An exemplary printable composition of a liquid or gel suspension of diodes comprises a plurality of diodes, a first solvent and/or a viscosity modifier. An exemplary diode comprises: a light emitting or absorbing region having a diameter between about 20 and 30 microns and a height between about 2.5 to 7 microns; a first terminal coupled to the light emitting region on a first side, the first terminal having a height between about 1 to 6 microns; and a second terminal coupled to the light emitting region on a second side opposite the first side, the second terminal having a height between about 1 to 6 microns.

Claims

1. A diode comprising:

a light emitting or absorbing region having a lateral dimension of 6 microns to 30 microns and a height of 1 micron to 7 microns;

a first conductive terminal coupled to the light emitting or absorbing region on a first side, the first conductive terminal having a height of 3 microns to 6 microns; and

a second conductive terminal coupled to the light emitting or absorbing region on a second side opposite the first side, the conductive second terminal having a height less than or equal to 2 microns;

wherein the diode is substantially hexagonal laterally, has a lateral dimension of 10 microns to 50 microns measured opposing face-to face, and a height of 5 microns to 25 microns.

2. The diode of claim 1, wherein the first conductive terminal and the second conductive terminal each comprise at least one electrically conductive material.

3. The diode of claim 1, further comprising a reflective metallic layer between the light emitting or absorbing region and the first conductive terminal, the metallic layer comprising a nickel layer and a gold layer.

4. The diode of claim 3, wherein the nickel layer is 40 to 60 Angstroms in height and the gold layer is 40 to 60 Angstroms in height.

5. The diode of claim 1, wherein the first conductive terminal is substantially hexagonal in the lateral dimension.

6. The diode of claim 5, wherein the first conductive terminal has at least one lateral side which has a substantially sigmoidal curvature and terminates in a curved point.

7. The diode of claim 1, wherein the first conductive terminal comprises die metal.

8. The diode of claim 7, wherein the first conductive terminal comprises a first layer of nickel coupled to the light emitting or absorbing region, a second layer of aluminum, a third layer of nickel, and a fourth layer of gold.

9. The diode of claim 8, wherein the first layer of nickel is 80 to 120 Angstroms in height, the second layer of aluminum is 3.5 to 5.5 microns in height, the third layer of nickel is 0.2 to 1.0 microns in height, and the fourth layer of gold is 80 to 120 Angstroms in height.

10. The diode of claim 1, wherein the first conductive terminal and the light emitting or absorbing region further comprise nitride passivation on lateral sides, the nitride passivation having a thickness of 0.2 microns to 1.0 microns.

11. The diode of claim 1, wherein the second conductive terminal has a height of 0.5 microns to 2 microns.

12. The diode of claim 1, wherein the light emitting or absorbing region is substantially hexagonal in the lateral dimension.

13. The diode of claim 1, wherein the light emitting or absorbing region comprises a gallium nitride (GaN) heterostructure.

14. The diode of claim 13, wherein the first conductive terminal is in ohmic contact with p+ GaN and the second conductive terminal is in ohmic contact with n+ GaN, or wherein the first conductive terminal is in ohmic contact with n+ GaN and the second conductive terminal is in ohmic contact with p+ GaN.

15. The diode of claim 13, further comprising a plurality of second conductive terminals having a height less than or equal to 2 microns.

16. The diode of claim 1, further comprising at least one conductive via structure coupled between the light emitting or absorbing region and either the first conductive terminal or the second conductive terminal.

17. The diode of claim 1, wherein the diode has a lateral dimension of 10 microns to 30 microns and a height less or equal to 15 microns.

18. The diode of claim 1, wherein the first conductive terminal has a height of 3 microns to 5 microns.

19. The diode of claim 1, wherein the light emitting or absorbing region has a shape selected from the group consisting of:

substantially hexagonal, substantially square, substantially triangular, substantially rectangular, substantially lobed, substantially stellate, substantially toroidal, and combinations thereof.

20. The diode of claim 1, wherein the light emitting or absorbing has a surface texture selected from the group consisting of:

a plurality of circular rings, a plurality of substantially curvilinear trapezoids, a plurality of parallel stripes, a stellate pattern, and combinations thereof.

21. The diode of claim 1, wherein the diode has at least one lateral side less than about 10 microns in height.

22. The diode of claim 21, wherein the at least one lateral side has a substantially sigmoidal curvature and terminates in a curved point.

23. The diode of claim 1, wherein the light emitting or absorbing region comprises at least one inorganic semiconductor selected from the group consisting of:

silicon, gallium arsenide (GaAs), gallium nitride (GaN), GaP, InAlGaP, AlInGaAs, InGaNAs, AlInGaSb, and mixtures thereof.

24. The diode of claim 1, wherein the light emitting or absorbing region comprises at least one organic semiconductor selected from the group consisting of:

π

-conjugated polymers, poly(acetylene)s, poly(pyrrole)s, poly(thiophene)s, polyanilines, polythiophenes, poly(p-phenylene sulfide), poly(para-phenylene vinylene)s (PPV) and PPV derivatives, poly(3-alkylthiophenes), polyindole, polypyrene, polycarbazole, polyazulene, polyazepine, poly(fluorene)s, polynaphthalene, polyaniline, polyaniline derivatives, polythiophene, polythiophene derivatives, polypyrrole, polypyrrole derivatives, polythianaphthene, polythianaphthane derivatives, polyparaphenylene, polyparaphenylene derivatives, polyacetylene, polyacetylene derivatives, polydiacethylene, polydiacetylene derivatives, polyparaphenylenevinylene, polyparaphenylenevinylene derivatives, polynaphthalene, polynaphthalene derivatives, polyisothianaphthene (PITN), polyheteroarylenvinylene (ParV) in which the heteroarylene group is thiophene, furan or pyrrol, polyphenylene-sulphide (PPS), polyperinaphthalene (PPN), polyphthalocyanine (PPhc), and their derivatives, copolymers thereof and mixtures thereof.

25. A diode comprising:

a light emitting or absorbing region, the light emitting or absorbing region substantially hexagonal in the lateral dimension, further having a lateral dimension of 6 to 30 microns measured opposing face-to-face and a height of 1 micron to 7 microns;

a first conductive terminal coupled to the light emitting or absorbing region on a first side, the first terminal having a height of 3 microns to 6 microns;

at least one second conductive terminal coupled to the light emitting or absorbing region on a second side opposite the first side, the at least one second terminal having a height less than or equal to 2 microns;

nitride passivation on one or more lateral sides of the light emitting or absorbing region or the first conductive terminal;

wherein the light emitting or absorbing region comprises at least one inorganic semiconductor selected from the group consisting of;

silicon, gallium arsenide (GaAs), gallium nitride (GaN), GaP, InAlGaP, AlInGaAs, InGaNAs, AlInGaSb, and mixtures thereof.

26. The diode of claim 25, wherein the diode is substantially hexagonal in the lateral dimension, has lateral dimension of 10 microns to 50 microns and a height of 5 microns to 25 microns.

27. The diode of claim 25, wherein the diode has at least one lateral side less than or equal to 10 microns in height, the at least one lateral side of the diode having a substantially sigmoidal curvature and terminating in a curved point.

28. The diode of claim 25, wherein the light emitting or absorbing region further comprises a reflective metallic layer between the light emitting or absorbing region and the first conductive terminal.

29. The diode of claim 25, wherein the first conductive terminal is substantially hexagonal in the lateral dimension.

30. The diode of claim 25, wherein the first conductive terminal is substantially elliptical in the lateral dimension.

31. The diode of claim 25, wherein the first conductive terminal has at least one lateral side which has a substantially sigmoidal curvature and terminates in a curved point.

32. The diode of claim 25, wherein the at least one second conductive terminal has a height of 0.5 microns to 2 microns.

33. The diode of claim 25, further comprising a plurality of second conductive terminals having a height less than or equal to 2 microns.

34. The diode of claim 25, wherein the light emitting or absorbing has a surface texture.

35. A diode comprising:

a light emitting or absorbing region having a lateral dimension of 6 microns to 30 microns and a height of 1 micron to 7 microns;

a first conductive terminal coupled to the light emitting or absorbing region on a first side, the first conductive terminal having a height of 3 microns to 6 microns; and

at least one second conductive terminal coupled to the light emitting or absorbing region on a second side opposite the first side, the at least one conductive second terminal having a height less than or equal to 2 microns;

wherein the diode is substantially hexagonal laterally, has a lateral dimension of 10 microns to 50 microns measured opposing face-to face, and a height of 5 microns to 25 microns.

36. A diode comprising:

a light emitting or absorbing region having a lateral dimension of 6 microns to 30 microns and a height of 1 micron to 7 microns;

a first conductive terminal coupled to the light emitting or absorbing region on a first side, the first conductive terminal having a height of 3 microns to 6 microns; and

at least one second conductive terminal coupled to the light emitting or absorbing region on a second side opposite the first side, the at least one conductive second terminal having a height less than or equal to 2 microns;

wherein the diode is substantially hexagonal laterally, has a lateral dimension of 10 microns to 50 microns measured opposing face-to face, a height of 5 microns to 25 microns, and has at least one lateral side less than or equal to 25 microns in height and having a substantially sigmoidal curvature which terminates in a curvilinear point.