Capacitive micromachine ultrasound transducer
First Claim
1. A capacitive micromachined ultrasound transducer, comprising:
- a silicon substrate;
a cavity;
a first electrode, which is arranged between the silicon substrate and the cavity;
wherein the first electrode is arranged under the cavity;
a membrane, wherein the membrane is arranged above the cavity and opposite to the first electrode;
a second electrode, wherein the second electrode is arranged above the cavity and opposite to the first electrode;
wherein the second electrode is arranged in or close to the membrane, wherein the first electrode and the second electrode are adapted to be supplied by a voltage;
a first isolation layer, which is arranged between the first electrode and the second electrode, wherein the first isolation layer further comprises a first sublayer which comprises an oxide, and a second sublayer which comprises a nitride, anda second isolation layer, wherein the second isolation layer is arranged between the second electrode and the cavity, wherein the first isolation layer is arranged between the first electrode and the cavity, wherein the second isolation layer comprises a dielectric.
1 Assignment
0 Petitions
Accused Products
Abstract
The patent application discloses a capacitive micromachined ultrasound transducer, comprising a silicon substrate; a cavity; a first electrode, which is arranged between the silicon substrate and the cavity; wherein the first electrode is arranged under the cavity; a membrane, wherein the membrane is arranged above the cavity and opposite to the first electrode; a second electrode, wherein the second electrode is arranged above the cavity and opposite to the first electrode; wherein the second electrode is arranged in or close to the membrane, wherein the first electrode and the second electrode are adapted to be supplied by a voltage; and a first isolation layer, which is arranged between the first electrode and the second electrode, wherein the first isolation layer comprises a dielectric. It is also described a system for generating or detecting ultrasound waves, wherein the system comprises a transducer according to the patent application. Further, it is disclosed a method for manufacturing a transducer according to the patent application, wherein the transducer is manufactured with the help of a CMOS manufacturing process, wherein the transducer can be manufactured as a post-processing feature during a CMOS process.
31 Citations
15 Claims
-
1. A capacitive micromachined ultrasound transducer, comprising:
-
a silicon substrate; a cavity; a first electrode, which is arranged between the silicon substrate and the cavity;
wherein the first electrode is arranged under the cavity;
a membrane, wherein the membrane is arranged above the cavity and opposite to the first electrode;a second electrode, wherein the second electrode is arranged above the cavity and opposite to the first electrode; wherein the second electrode is arranged in or close to the membrane, wherein the first electrode and the second electrode are adapted to be supplied by a voltage; a first isolation layer, which is arranged between the first electrode and the second electrode, wherein the first isolation layer further comprises a first sublayer which comprises an oxide, and a second sublayer which comprises a nitride, and a second isolation layer, wherein the second isolation layer is arranged between the second electrode and the cavity, wherein the first isolation layer is arranged between the first electrode and the cavity, wherein the second isolation layer comprises a dielectric. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
-
Specification