Metrology method and apparatus, lithographic system and device manufacturing method

• US 9,134,256 B2
• Filed: 03/13/2013
• Issued: 09/15/2015
• Est. Priority Date: 03/27/2012
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Smilde, Hendrik Jan Hidde, Adam, Omer Abubaker Omer
• Primary Examiner(s): NGUYEN, HUNG
• Application Number:
  US13/799,673
• Publication Number:
  US 20130258310A1
• Time in Patent Office: 916 Days
• Field of Search: 355/52, 355/53, 355/55, 355/67
• US Class Current: 1/1
• CPC Class Codes: G01N 21/956 Inspecting patterns on the surface of objects contactless testing of electronic circuits G01R31/308; testing currency G07D; manufacturing processes per se of semiconductor devices implementing a measuring step H01L22/10
• CPC Class Codes: G03F 7/70633 Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
• CPC Class Codes: G03F 7/70683 Mark designs
• CPC Class Codes: G03F 9/7019 Calibration
• CPC Class Codes: Y10T 428/24802 Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Abstract

A lithographic process is used to form a plurality of target structures (T) on a substrate (W). Each target structure comprises overlaid gratings each having a specific overlay bias. Asymmetry (A) of each grating, measured by scatterometry, includes contributions due to (i) the overlay bias, (ii) an overlay error (OV) in the lithographic process and (iii) bottom grating asymmetry within the overlaid gratings. Asymmetry measurements are obtained for three or more target structures having three or more different values of overlay bias (e.g., −d, 0, +d). Knowing the three different overlay bias values and a theoretical curve relationship between overlay error and asymmetry, overlay error (OV) can be calculated while correcting the effect of bottom grating asymmetry. Bias schemes with three and four different biases are disclosed as examples. Gratings with different directions and biases can be interleaved in a composite target structure.

Claims

1. A method comprising:

forming a set of targets on a substrate using a lithographic process, each target of the set of targets comprising an overlay bias, the overlay bias of each target of the set of targets being different from each other target of the set of targets;

obtaining three or more asymmetry measurements from corresponding three or more targets of the set of targets, each of the three or more asymmetry measurements comprising;

a first asymmetry value corresponding to an overlay error in the lithographic process, and

a second asymmetry value corresponding to feature asymmetry in the set of targets; and

calculating the overlay error based on the three or more asymmetry measurements and an assumed non-linear relationship between the overlay error and the three or more asymmetry measurements, such that the second asymmetry value corresponding to feature asymmetry is excluded from the calculated overlay error.

2. The method of claim 1, wherein the assumed non-linear relationship is a sinusoidal function or a combination of sinusoidal functions related harmonically to one another.

3. The method of claim 1, wherein the overlay error calculation is based on an assumption that the second asymmetry value corresponding, to feature asymmetry is constant for all values of overlay.

4. The method of claim 1, wherein the overlay error calculation is based on three asymmetry measurements.

5. The method of claim 1, wherein the overlay error calculation is based on four asymmetry measurements.

6. The method of claim 1, wherein:

each target of the set of targets comprises periodic structures; and

the overlay bias value is greater than about 5% or 10% or greater than about 15% or 20% of a pitch of the periodic structures.

7. The method of claim 1, wherein the three or more asymmetry measurements are obtained substantially in parallel.

8. The method of claim 1, wherein:

a first sub-set of the set of targets comprises a periodic structure having periodicity in a first direction;

a second sub-set of the set of targets comprises a periodic structure having periodicity in a second direction, the first and second directions being different from each other;

the overlay error calculation is performed separately in the first and second directions using both the first and second sub-sets; and

each target of the first and second sub-sets are arranged in an alternating pattern on the substrate to form a composite target so that the targets having periodicity in the first direction are separated from each other by targets having periodicity in the second direction.

9. An inspection apparatus comprising:

a support configured to hold a substrate having a set of targets, each of the targets comprising an overlay bias, the overlay bias of each of the targets being different from each other of the targets;

an optical system configured to detect radiation scattered by three or more targets of the set of targets to obtain corresponding three or more asymmetry measurements, each of the three or more asymmetry measurements comprising;

a first asymmetry value corresponding to an overlay error in the lithographic process, and

a second asymmetry value corresponding to feature asymmetry in the set of targets; and

a processor configured to calculate the overlay error based on the three or more asymmetry measurements and an assumed non-linear relationship between the overlay error and the three or more asymmetry measurements, such that the second asymmetry value corresponding to feature asymmetry is excluded from the calculated overlay error.

10. The apparatus of claim 9, wherein the assumed non-linear relationship is a sinusoidal function or a combination of sinusoidal functions related harmonically to one another.

11. The apparatus of claim 9, wherein the processor is configured to calculate the overlay error based on an assumption that the second asymmetry value corresponding to feature asymmetry is constant for all values of overlay.

12. The apparatus of claim 9, wherein the processor is configured to calculate the overlay error based on three asymmetry measurements.

13. The apparatus of claim 9, wherein the processor is configured to calculate the overlay error based on four asymmetry measurements for target structures having four different overlay bias values in the calculation of overlay error.

14. The apparatus of claim 9, wherein the optical system includes an image sensor and is configured to capture radiation scattered from the three or more targets substantially simultaneously on different portions of the image sensor.

15. A non-transitory computer readable medium having stored thereon computer-executable instructions that, in response to execution by a computing device, cause the computing device to perform operations comprising:

forming a set of targets on a substrate using a lithographic process, each target of the set of targets comprising an overlay bias, the overlay bias of each target of the set of targets being different from each other target of the set of targets;

obtaining three or more asymmetry measurements from corresponding three or more targets of the set of targets formed on the substrate, each of the three or more asymmetry measurements comprising;

a first asymmetry value corresponding to an overlay error in the lithographic process, and

a second asymmetry value corresponding to feature asymmetry in the set of targets; and

calculating the overlay error based on the three or more asymmetry measurements and an assumed non-linear relationship between the overlay error and the three or more asymmetry measurements, such that the second asymmetry value corresponding to feature asymmetry is excluded from the calculated overlay error.

16. A lithographic system comprising:

a lithographic apparatus comprising;

an illumination system configured to illuminate a pattern,

a projection system configured to project an image of the pattern onto a substrate, and

a support configured to hold a substrate having a set of targets, each of the targets comprising an overlay bias, the overlay bias of each of the targets being different from each other of the targets; and

an inspection apparatus comprising;

an optical system configured to detect radiation scattered by three or more targets of the set of targets to obtain corresponding three or more asymmetry measurements, each of the three or more asymmetry measurements comprising;

a first asymmetry value corresponding to an overlay error in the lithographic process, and

a second asymmetry value corresponding to feature asymmetry in the set of targets; and

a processor configured to calculate the overlay error based on the three or more asymmetry measurements an assumed non-linear relationship between the overlay error and the three or more asymmetry measurements, such that the second asymmetry value corresponding to feature asymmetry is excluded from the calculated overlay error,

wherein the lithographic apparatus is configured to use the calculated overlay error from the inspection apparatus in applying the pattern to further substrates.

17. A method comprising:

forming a set of targets on a substrate using a lithographic process, each target of the set of targets comprising an overlay bias, the overlay bias of each target of the set of targets being different from each other target of the set of targets;

obtaining three or more asymmetry measurements from corresponding three or more targets of the set of targets formed on the substrate, each of the three or more asymmetry measurements comprising;

a first asymmetry value corresponding to an overlay error in the lithographic process, and

a second asymmetry value corresponding to feature asymmetry in the set of targets; and

calculating the overlay error based on the three or more asymmetry measurements and an assumed non-linear relationship between the overlay error and the three or more asymmetry measurements, such that the second asymmetry value corresponding to feature asymmetry is excluded from the calculated overlay error; and

controlling the lithographic process for later substrates based on the calculated overlay error.