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Dosimetry apparatus, systems, and methods

  • US 9,134,430 B2
  • Filed: 04/06/2009
  • Issued: 09/15/2015
  • Est. Priority Date: 04/07/2008
  • Status: Active Grant
First Claim
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1. A method of making a direct ion storage (DIS) radiation dosimeter comprising:

  • forming a first layer having MOSFET structure thereon by semiconductor processing techniques, the MOSFET structure having a floating gate with an exposed surface;

    forming a second layer having a concavity therein;

    forming a third layer, having a concavity therein;

    sandwiching the first layer between the second and third layer;

    bonding the three layers together to form hermetic seal;

    wherein;

    the concavity in the second layer and the concavity in the third layer are aligned with the exposed surface of the floating gate and the concavity in the second layer communicates with the concavity in the third layer through the first layer to form an ion chamber.

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