Dosimetry apparatus, systems, and methods
First Claim
1. A method of making a direct ion storage (DIS) radiation dosimeter comprising:
- forming a first layer having MOSFET structure thereon by semiconductor processing techniques, the MOSFET structure having a floating gate with an exposed surface;
forming a second layer having a concavity therein;
forming a third layer, having a concavity therein;
sandwiching the first layer between the second and third layer;
bonding the three layers together to form hermetic seal;
wherein;
the concavity in the second layer and the concavity in the third layer are aligned with the exposed surface of the floating gate and the concavity in the second layer communicates with the concavity in the third layer through the first layer to form an ion chamber.
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Accused Products
Abstract
A direct ion storage (DIS) radiation detector or dosimeter has a design that is easy and low cost to manufacture using semiconductor processing techniques. The detectors include internal communications interfaces so they are easy to read. Different interfaces, including wired, e.g. USB ports, and wireless interfaces, may be used, so that the dosimeters may be read over the internet. The detectors can thus be deployed or used in a variety of detection systems and screening methods, including periodic or single time screening of people, objects, or containers at a location by means of affixed dosimeters; screening of objects, containers or people at a series of locations by means of affixed dosimeters, and surveillance of an area by monitoring moving dosimeters affixed to people or vehicles.
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Citations
62 Claims
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1. A method of making a direct ion storage (DIS) radiation dosimeter comprising:
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forming a first layer having MOSFET structure thereon by semiconductor processing techniques, the MOSFET structure having a floating gate with an exposed surface; forming a second layer having a concavity therein; forming a third layer, having a concavity therein; sandwiching the first layer between the second and third layer; bonding the three layers together to form hermetic seal; wherein; the concavity in the second layer and the concavity in the third layer are aligned with the exposed surface of the floating gate and the concavity in the second layer communicates with the concavity in the third layer through the first layer to form an ion chamber. - View Dependent Claims (2, 3, 4)
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5. A direct ion storage (DIS) radiation dosimeter package, comprising:
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a housing having an aperture in an end thereof; a frame fitting inside and slidably mounted in the housing; a DIS radiation sensor mounted on the frame; a data collection and data readout integrated circuit electrically connected to the DIS radiation sensor and mounted on the frame; the data collection and data readout integrated circuit having a USB connection at one end thereof proximal to the aperture; a base element rotatably attached to the housing so that as the base element is rotated, the frame slides toward the aperture and the USB connection extends outside the aperture, wherein the DIS radiation sensor comprises; a first layer having a MOSFET structure formed thereon by semiconductor processing techniques, the MOSFET structure having a floating gate with an exposed surface; a second layer having a concavity therein; a third layer, optionally having a concavity therein; the first layer being sandwiched between the second and third layer, the three layers being bonded together to form a hermetic seal; wherein the concavity in the second layer, and any concavity in the third layer, are aligned with the exposed surface of the floating gate to form an ion chamber.
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6. A direct ion storage (DIS) radiation dosimeter package, comprising:
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a housing having an aperture in an end thereof; a frame fitting inside and slidably mounted in the housing; a DIS radiation sensor mounted on the frame; a data collection and data readout integrated circuit electrically connected to the DIS radiation sensor and mounted on the frame; the data collection and data readout integrated circuit having a USB connection at one end thereof proximal to the aperture; a base element rotatably attached to the housing so that as the base element is rotated, the frame slides toward the aperture and the USB connection extends outside the aperture, wherein the data collection and data readout integrated circuit includes data integrity checking and encryption.
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7. A direct ion storage (DIS) radiation dosimeter package, comprising:
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a housing having an aperture in an end thereof; a frame fitting inside and slidably mounted in the housing; a DIS radiation sensor mounted on the frame; a data collection and data readout integrated circuit electrically connected to the DIS radiation sensor and mounted on the frame; the data collection and data readout integrated circuit having a USB connection at one end thereof proximal to the aperture; a base element rotatably attached to the housing so that as the base element is rotated, the frame slides toward the aperture and the USB connection extends outside the aperture, wherein; the data collection and data readout integrated circuit is externally powered. - View Dependent Claims (8)
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9. A direct ion storage (DIS) radiation dosimeter package, comprising:
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a housing having an aperture in an end thereof; a frame fitting inside and slidably mounted in the housing; a DIS radiation sensor mounted on the frame; a data collection and data readout integrated circuit electrically connected to the DIS radiation sensor and mounted on the frame; the data collection and data readout integrated circuit having a USB connection at one end thereof proximal to the aperture; a base element rotatably attached to the housing so that as the base element is rotated, the frame slides toward the aperture and the USB connection extends outside the aperture, wherein the data collection and data readout integrated circuit further comprises an alarm signal receiving circuit. - View Dependent Claims (10)
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11. A direct ion storage (DIS) radiation dosimeter, comprising:
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a first layer having a MOSFET structure formed thereon by semiconductor processing techniques, the MOSFET structure having a floating gate with an exposed surface; a second layer having a concavity therein; a third layer, having a concavity therein; the first layer being sandwiched between the second and third layer, the three layers being bonded together to form a hermetic seal; wherein the concavity in the second layer, and the concavity in the third layer, are aligned with the exposed surface of the floating gate and the concavity in the second layer communicates with the concavity in the third layer through the first layer to form an ion chamber. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62)
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Specification