Method for manufacturing semiconductor device
First Claim
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1. A method for manufacturing a semiconductor device comprising the steps of:
- forming a first electrode over a substrate;
forming an insulating film over the first electrode;
forming an oxide semiconductor layer over the insulating film;
performing a heat treatment on the oxide semiconductor layer in a chamber, whereby a hydrogen concentration of the oxide semiconductor layer is reduced;
introducing oxygen into the chamber after the heat treatment;
forming a source electrode and a drain electrode electrically connected to the oxide semiconductor layer;
forming an oxide insulating film over and in contact with the oxide semiconductor layer; and
forming a second electrode over the oxide insulating film,wherein the second electrode overlaps with the first electrode with the oxide semiconductor layer interposed therebetween, andwherein the heat treatment is performed under reduced pressure or performed in an inert atmosphere.
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Abstract
An object is to manufacture a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, heat treatment (for dehydration or dehydrogenation) is performed to improve the purity of the oxide semiconductor film and reduce impurities including moisture or the like. After that, slow cooling is performed under an oxygen atmosphere. Besides impurities including moisture or the like exiting in the oxide semiconductor film, heat treatment causes reduction of impurities including moisture or the like exiting in a gate insulating layer and those in interfaces between the oxide semiconductor film and films which are provided over and below the oxide semiconductor and in contact therewith.
215 Citations
21 Claims
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1. A method for manufacturing a semiconductor device comprising the steps of:
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forming a first electrode over a substrate; forming an insulating film over the first electrode; forming an oxide semiconductor layer over the insulating film; performing a heat treatment on the oxide semiconductor layer in a chamber, whereby a hydrogen concentration of the oxide semiconductor layer is reduced; introducing oxygen into the chamber after the heat treatment; forming a source electrode and a drain electrode electrically connected to the oxide semiconductor layer; forming an oxide insulating film over and in contact with the oxide semiconductor layer; and forming a second electrode over the oxide insulating film, wherein the second electrode overlaps with the first electrode with the oxide semiconductor layer interposed therebetween, and wherein the heat treatment is performed under reduced pressure or performed in an inert atmosphere. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for manufacturing a semiconductor device comprising the steps of:
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forming a first electrode over a substrate; forming an insulating film over the first electrode; forming an oxide semiconductor layer over the insulating film; performing a heat treatment on the oxide semiconductor layer in a chamber; introducing oxygen into the chamber after the heat treatment; forming a source electrode and a drain electrode electrically connected to the oxide semiconductor layer; forming an oxide insulating film over and in contact with the oxide semiconductor layer; and forming a second electrode over the oxide insulating film, wherein the second electrode overlaps with the first electrode with the oxide semiconductor layer interposed therebetween, wherein the heat treatment is performed under reduced pressure or performed in an inert atmosphere, and wherein the heat treatment is performed at a temperature higher or equal to 400°
C. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A method for manufacturing a semiconductor device comprising the steps of:
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forming a first electrode over a substrate; forming an insulating film over the first electrode; forming an oxide semiconductor layer over the insulating film; performing a heat treatment on the oxide semiconductor layer in a chamber; introducing oxygen into the chamber after the heat treatment; forming a source electrode and a drain electrode electrically connected to the oxide semiconductor layer; forming an oxide insulating film over and in contact with the oxide semiconductor layer; and forming a second electrode over the oxide insulating film, wherein the second electrode overlaps with the first electrode with the oxide semiconductor layer interposed therebetween, wherein the heat treatment is performed under reduced pressure or performed in an inert atmosphere, and wherein after the heat treatment, the oxide semiconductor layer includes crystals. - View Dependent Claims (16, 17, 18, 19, 20, 21)
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsSasaki, Toshinari, Sakata, Junichiro, Yamazaki, Shunpei, Ohara, Hiroki
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Primary Examiner(s)Maldonado, Julio J
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Assistant Examiner(s)BACHNER, ROBERT G
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Application NumberUS14/493,748Publication NumberTime in Patent Office357 DaysField of Search438/104, 438/151, 257/E21.411, 257/E21.459US Class Current1/1CPC Class CodesH01L 21/02565 Oxide semiconducting materi...H01L 21/02664 Aftertreatments planarisati...H01L 21/383 using diffusion into or out...H01L 21/46 Treatment of semiconductor ...H01L 21/477 Thermal treatment for modif...H01L 27/1225 with semiconductor material...H01L 29/66969 of devices having semicondu...H01L 29/7869 having a semiconductor body...H01L 29/78693 the semiconducting oxide be...
