Semiconductor device and method for manufacturing semiconductor device

• US 9,136,361 B2
• Filed: 03/12/2015
• Issued: 09/15/2015
• Est. Priority Date: 10/13/2011
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Tezuka, Sachiaki, Isobe, Atsuo, Hatano, Takehisa, Hanaoka, Kazuya
• Primary Examiner(s): Ho, Anthony
• Assistant Examiner(s): LAIR, SAMUEL L
• Application Number:
  US14/656,125
• Publication Number:
  US 20150187917A1
• Time in Patent Office: 187 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/463 Mechanical treatment, e.g. grinding, ultrasonic treatment
• CPC Class Codes: H01L 21/465 Chemical or electrical treatment, e.g. electrolytic etching to form insulating layers H01L21/469
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H01L 29/41783 Raised source or drain electrodes self aligned with the gate
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

To provide a miniaturized transistor having high electric characteristics. A conductive film to be a source electrode layer and a drain electrode layer is formed to cover an oxide semiconductor layer and a channel protection layer, and then a region of the conductive film, which overlaps with the oxide semiconductor layer and the channel protection layer, is removed by chemical mechanical polishing treatment. Precise processing can be performed accurately because an etching step using a resist mask is not performed in the step of removing part of the conductive film to be the source electrode layer and the drain electrode layer. With the channel protection layer, damage to the oxide semiconductor layer or a reduction in film thickness due to the chemical mechanical polishing treatment on the conductive film can be suppressed.

Claims

1. A method for manufacturing a semiconductor device, comprising the steps of:

forming an oxide semiconductor layer;

forming an insulating layer in contact with the oxide semiconductor layer;

processing the oxide semiconductor layer and the insulating layer into an island-shape;

forming a conductive film over the oxide semiconductor layer and the insulating layer;

removing a region of the conductive film overlapping with the oxide semiconductor layer and the insulating layer to form a conductive film having an opening;

processing the conductive film having the opening to form a source electrode layer and a drain electrode layer;

forming a gate insulating layer over the insulating layer, the source electrode layer, and the drain electrode layer;

forming a gate electrode layer overlapping with the oxide semiconductor layer with the insulating layer and the gate insulating layer provided therebetween; and

forming a first sidewall layer overlapping with the source electrode layer and a second sidewall layer overlapping with the drain electrode layer, the first sidewall layer and the second sidewall layer being in contact with a side surface of the gate electrode layer.

2. The method for manufacturing a semiconductor device according to claim 1, wherein the removal of the region of the conductive film is performed by chemical mechanical polishing treatment.

3. The method for manufacturing a semiconductor device according to claim 1, wherein the oxide semiconductor layer comprises a crystalline portion.

4. The method for manufacturing a semiconductor device according to claim 3, wherein the crystalline portion includes crystals whose c-axes are aligned parallel to a normal vector of a surface on which the oxide semiconductor layer is formed or a normal vector of a surface of the oxide semiconductor layer.

5. The method for manufacturing a semiconductor device according to claim 1, further comprising the steps of:

performing a heat treatment on the oxide semiconductor layer in a nitrogen atmosphere, and

supplying oxygen to the oxide semiconductor layer in an atmosphere containing oxygen.

6. The method for manufacturing a semiconductor device according to claim 1, further comprising a step of forming a pair of impurity regions in the oxide semiconductor layer.

7. A method for manufacturing a semiconductor device, comprising the steps of:

forming an oxide semiconductor layer;

forming an insulating layer in contact with the oxide semiconductor layer;

processing the oxide semiconductor layer and the insulating layer into an island-shape;

forming a conductive film covering the oxide semiconductor layer and the insulating layer;

removing a region of the conductive film overlapping with the oxide semiconductor layer and the insulating layer to form a conductive film having an opening;

processing the conductive film having the opening to form a source electrode layer and a drain electrode layer;

removing the insulating layer;

forming a gate insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer;

forming a gate electrode layer overlapping with the oxide semiconductor layer with the gate insulating layer provided therebetween; and

forming a first sidewall layer overlapping with the source electrode layer and a second sidewall layer overlapping with the drain electrode layer, the first sidewall layer and the second sidewall layer being in contact with a side surface of the gate electrode layer.

8. The method for manufacturing a semiconductor device according to claim 7, wherein the removal of the region of the conductive film is performed by chemical mechanical polishing treatment.

9. The method for manufacturing a semiconductor device according to claim 7, wherein the oxide semiconductor layer comprises a crystalline portion.

10. The method for manufacturing a semiconductor device according to claim 9, wherein the crystalline portion includes crystals whose c-axes are aligned parallel to a normal vector of a surface on which the oxide semiconductor layer is formed or a normal vector of a surface of the oxide semiconductor layer.

11. The method for manufacturing a semiconductor device according to claim 7, further comprising the steps of:

performing a heat treatment on the oxide semiconductor layer in a nitrogen atmosphere, and

supplying oxygen to the oxide semiconductor layer in an atmosphere containing oxygen.

12. The method for manufacturing a semiconductor device according to claim 7, further comprising a step of forming a pair of impurity regions in the oxide semiconductor layer.