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Oxide semiconductor, thin film transistor, and display device

  • US 9,136,389 B2
  • Filed: 10/19/2009
  • Issued: 09/15/2015
  • Est. Priority Date: 10/24/2008
  • Status: Active Grant
First Claim
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1. A thin film transistor comprising:

  • a first oxide insulating layer;

    an oxide semiconductor as a channel formation region, over the first oxide insulating layer;

    a second oxide insulating layer over the oxide semiconductor; and

    an insulating layer over the second oxide insulating layer,wherein the insulating layer prevents water vapor of an external environment from entering into the oxide semiconductor,wherein the oxide semiconductor contains hydrogen higher than or equal to 1×

    1018/cm3 and lower than or equal to 5×

    1020/cm3 and the concentration of hydrogen is higher at an interface of the oxide semiconductor with the first oxide insulating layer than in the inside of the oxide semiconductor, andwherein the oxide semiconductor comprises In, Zn, and M (M is one or a plurality of elements selected from a group consisting of Ga, Fe, Ni, Mn, Co, and Al) as components.

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