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Semiconductor device and manufacturing method thereof

  • US 9,136,390 B2
  • Filed: 05/10/2011
  • Issued: 09/15/2015
  • Est. Priority Date: 12/26/2008
  • Status: Active Grant
First Claim
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1. An active matrix display device comprising:

  • a transistor which comprises;

    a gate electrode over a substrate;

    a gate insulating layer over the gate electrode; and

    an oxide semiconductor layer having a channel formation region over the gate electrode with the gate insulating layer interposed therebetween, the oxide semiconductor layer comprising indium, tin and zinc;

    an insulating layer comprising aluminum oxide over the oxide semiconductor layer;

    a pixel electrode in electrical contact with the oxide semiconductor layer; and

    a terminal portion which comprises;

    a first conductive layer over the substrate;

    an insulating layer over the first conductive layer; and

    a transparent conductive film over the insulating layer, wherein the transparent conductive film is overlapped with the first conductive layer,wherein the oxide semiconductor layer includes a first oxide semiconductor layer and a second oxide semiconductor layer on the first oxide semiconductor layer, the first oxide semiconductor layer having a lower resistivity than the second oxide semiconductor layer, andwherein the first conductive layer is electrically floating.

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