Stacked acoustic resonator comprising a bridge
First Claim
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1. A bulk acoustic wave (BAW) resonator structure, comprising:
- a substrate comprising a cavity;
a first electrode disposed over the substrate;
a planarization layer disposed over the substrate and adjacent to the first electrode, the planarization layer not overlapping the cavity;
a first piezoelectric layer disposed over the first electrode;
a second electrode disposed over the first piezoelectric layer;
a second piezoelectric layer disposed over the second electrode;
a third electrode disposed over the second piezoelectric layer; and
a bridge disposed between the first electrode and the third electrode, the bridge extending past an edge of the cavity or acoustic reflector.
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Abstract
In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first electrode disposed over a substrate; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer; a second piezoelectric layer disposed over the second electrode; a third electrode disposed over the second piezoelectric layer; and a bridge disposed between the first electrode and the third electrode.
520 Citations
62 Claims
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1. A bulk acoustic wave (BAW) resonator structure, comprising:
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a substrate comprising a cavity; a first electrode disposed over the substrate; a planarization layer disposed over the substrate and adjacent to the first electrode, the planarization layer not overlapping the cavity; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer; a second piezoelectric layer disposed over the second electrode; a third electrode disposed over the second piezoelectric layer; and a bridge disposed between the first electrode and the third electrode, the bridge extending past an edge of the cavity or acoustic reflector. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A bulk acoustic wave (BAW) resonator structure, comprising:
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a substrate comprising a cavity; a first electrode disposed over the substrate; a planarization layer disposed over the substrate and adjacent to the first electrode, the planarization layer not overlapping the cavity; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer; a second piezoelectric layer disposed over the second electrode; a third electrode disposed over the second piezoelectric layer; a bridge disposed between the first electrode and the third electrode, the bridge extending past an edge of the cavity or acoustic reflector; and an inner raised region disposed over the third electrode. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32)
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33. A bulk acoustic wave (BAW) resonator structure, comprising:
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a substrate comprising an acoustic reflector; a first electrode disposed over the substrate; a planarization layer disposed over the substrate and adjacent to the first electrode, the planarization layer not overlapping the acoustic reflector; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer; a second piezoelectric layer disposed over the second electrode; a third electrode disposed over the second piezoelectric layer; and a bridge disposed between the first electrode and the third electrode, the bridge extending past an edge of the acoustic reflector. - View Dependent Claims (34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48)
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49. A bulk acoustic wave (BAW) resonator structure, comprising:
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a substrate comprising an acoustic reflector; a first electrode disposed over the substrate; a planarization layer disposed over the substrate and adjacent to the first electrode, the planarization layer not overlapping the acoustic reflector; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer; a second piezoelectric layer disposed over the second electrode; a third electrode disposed over the second piezoelectric layer; a bridge disposed between the first electrode and the third electrode, the bridge extending past an edge of the acoustic reflector; and an inner raised region disposed over the third electrode. - View Dependent Claims (50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62)
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Specification