Semiconductor device and method of manufacturing a semiconductor device with a continuous silicate glass structure
First Claim
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1. A semiconductor device, comprising:
- a semiconductor body including a first surface;
a continuous silicate glass structure over the first surface; and
whereina part of the continuous glass structure in an area at least partially surrounding the active area includes a concentration of at least one of phosphor and boron that decreases by at least a factor of two between a first side and a second side of the continuous glass structure, wherein the second side is closer to the first surface of the semiconductor body than the first side.
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Abstract
A method of manufacturing a semiconductor device includes forming a continuous silicate glass structure over a first surface of a semiconductor body, including a first part of the continuous glass structure over an active area of the semiconductor body and a second part of the continuous glass structure over an area of the semiconductor body outside of the active area. A first composition of dopants included in the first part of continuous glass structure differs from a second composition of dopants of the second part of the continuous glass structure.
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8 Claims
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1. A semiconductor device, comprising:
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a semiconductor body including a first surface; a continuous silicate glass structure over the first surface; and
whereina part of the continuous glass structure in an area at least partially surrounding the active area includes a concentration of at least one of phosphor and boron that decreases by at least a factor of two between a first side and a second side of the continuous glass structure, wherein the second side is closer to the first surface of the semiconductor body than the first side. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor device, comprising:
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a semiconductor body including a first surface; a continuous silicate glass layer stack over the first surface; and
whereinthe continuous silicate glass layer stack includes at least one BPSG layer and one PSG layer over an active area of the semiconductor body and over a junction termination area surrounding the active area. - View Dependent Claims (8)
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Specification