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Passivation structure of fin field effect transistor

  • US 9,142,474 B2
  • Filed: 10/07/2013
  • Issued: 09/22/2015
  • Est. Priority Date: 10/07/2013
  • Status: Active Grant
First Claim
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1. A fin field effect transistor (FinFET) comprising:

  • a substrate comprising a major surface;

    a fin structure protruding from the major surface comprising;

    a lower fin portion comprising a first semiconductor material having a first lattice constant;

    an upper fin portion comprising a second semiconductor material having a second lattice constant greater than the first lattice constant;

    a middle fin portion between the lower fin portion and upper fin portion, wherein the middle fin portion comprises a third semiconductor material having a third lattice constant between the first lattice constant and the second lattice constant; and

    a passivation structure surrounding the fin structure comprising;

    a lower passivation portion surrounding the lower fin portion comprising a first oxynitride of the first semiconductor material;

    an upper passivation portion surrounding the upper fin portion comprising a second oxynitride of the second semiconductor material; and

    a middle passivation portion between the lower passivation portion and upper passivation portion, wherein the middle passivation portion surrounding the middle fin portion comprises a third oxynitride of the third semiconductor material.

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