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High-voltage cascaded diode with HEMT and monolithically integrated semiconductor diode

  • US 9,142,550 B2
  • Filed: 06/18/2013
  • Issued: 09/22/2015
  • Est. Priority Date: 06/18/2013
  • Status: Active Grant
First Claim
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1. A cascaded diode, comprising:

  • a III-nitride semiconductor body;

    an HEMT having a gate, a drain, a source, and a channel connecting the source and the drain, the channel controlled by the gate and formed by a junction between two materials of the III-nitride semiconductor body with different band gaps; and

    a semiconductor diode monolithically integrated with the HEMT, the semiconductor diode having a cathode connected to the source of the HEMT and an anode connected to the gate of the HEMT,wherein the anode of the semiconductor diode forms the anode of the cascaded diode and the drain of the HEMT forms the cathode of the cascaded diode.

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