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Light emitting diode

  • US 9,142,715 B2
  • Filed: 05/02/2011
  • Issued: 09/22/2015
  • Est. Priority Date: 06/24/2010
  • Status: Active Grant
First Claim
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1. A light emitting diode (LED), comprising:

  • a substrate;

    a first nitride semiconductor layer arranged on the substrate;

    an active layer arranged on the first nitride semiconductor layer;

    a second nitride semiconductor layer arranged on the active layer;

    a third nitride semiconductor layer disposed between the first nitride semiconductor layer and the active layer or between the second nitride semiconductor layer and the active layer, the third nitride semiconductor layer comprising a plurality of scatter elements within the third nitride semiconductor layer; and

    a distributed Bragg reflector (DBR) comprising a multi-layered structure, the substrate being arranged between the DBR and the third nitride semiconductor layer,wherein;

    the scatter elements comprise air gaps surrounded on four sides by the third nitride semiconductor layer; and

    the air gaps are disposed in a range of 100 nm to 1000 nm from the active layer.

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