Light emitting diode
First Claim
1. A light emitting diode (LED), comprising:
- a substrate;
a first nitride semiconductor layer arranged on the substrate;
an active layer arranged on the first nitride semiconductor layer;
a second nitride semiconductor layer arranged on the active layer;
a third nitride semiconductor layer disposed between the first nitride semiconductor layer and the active layer or between the second nitride semiconductor layer and the active layer, the third nitride semiconductor layer comprising a plurality of scatter elements within the third nitride semiconductor layer; and
a distributed Bragg reflector (DBR) comprising a multi-layered structure, the substrate being arranged between the DBR and the third nitride semiconductor layer,wherein;
the scatter elements comprise air gaps surrounded on four sides by the third nitride semiconductor layer; and
the air gaps are disposed in a range of 100 nm to 1000 nm from the active layer.
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Accused Products
Abstract
An exemplary embodiment of the present invention relates to a light emitting diode (LED) including a substrate, a first nitride semiconductor layer arranged on the substrate, an active layer arranged on the first nitride semiconductor layer, a second nitride semiconductor layer arranged on the active layer, a third nitride semiconductor layer disposed between the first nitride semiconductor layer or between the second nitride semiconductor layer and the active layer, the third nitride semiconductor layer comprising a plurality of scatter elements within the third nitride semiconductor layer, and a distributed Bragg reflector (DBR) comprising a multi-layered structure, the substrate being arranged between the DBR and the third nitride semiconductor layer.
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Citations
17 Claims
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1. A light emitting diode (LED), comprising:
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a substrate; a first nitride semiconductor layer arranged on the substrate; an active layer arranged on the first nitride semiconductor layer; a second nitride semiconductor layer arranged on the active layer; a third nitride semiconductor layer disposed between the first nitride semiconductor layer and the active layer or between the second nitride semiconductor layer and the active layer, the third nitride semiconductor layer comprising a plurality of scatter elements within the third nitride semiconductor layer; and a distributed Bragg reflector (DBR) comprising a multi-layered structure, the substrate being arranged between the DBR and the third nitride semiconductor layer, wherein; the scatter elements comprise air gaps surrounded on four sides by the third nitride semiconductor layer; and the air gaps are disposed in a range of 100 nm to 1000 nm from the active layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A light emitting diode (LED), comprising:
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a semiconductor stack arranged on a support substrate, the semiconductor stack comprising; a first conductivity-type semiconductor layer; an active layer; and a second conductivity-type semiconductor layer; a first electrode arranged between the support substrate and the semiconductor stack, the first electrode being in ohmic contact with the semiconductor stack, the first electrode comprising a first region exposed to the outside of the semiconductor stack; a first bonding pad arranged on the first region of the first electrode, the first bonding pad electrically connected to the first electrode; and a second electrode arranged on the semiconductor stack, wherein at least one of the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer comprises a plurality of scatter elements spaced apart from one another, wherein the scatter elements are entirely enclosed in the first conductivity-type semiconductor layer or the second conductivity-type semiconductor layer, and wherein the scatter elements comprise an air layer and are arranged in a range of 50 nm to 1000 nm from the active layer. - View Dependent Claims (12, 13, 14, 15, 16)
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17. A light emitting diode (LED), comprising:
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a substrate; a first nitride semiconductor layer arranged on the substrate; an active layer arranged on the first nitride semiconductor layer; a second nitride semiconductor layer arranged on the active layer; a third nitride semiconductor layer disposed between the first nitride semiconductor layer and the active layer or between the second nitride semiconductor layer and the active layer, the third nitride semiconductor layer comprising a plurality of scatter elements entirely enclosed within the third nitride semiconductor layer; and a distributed Bragg reflector (DBR) comprising a multi-layered structure, the substrate being arranged between the DBR and the third nitride semiconductor layer, wherein; the scatter elements comprise air gaps surrounded on four sides by the third nitride semiconductor layer; and the air gaps are disposed in a range of 100 nm to 1000 nm from the active layer.
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Specification