Thin-film LED with P and N contacts electrically isolated from the substrate
First Claim
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1. A thin-film light emitting diode, comprising:
- a substrate;
a metal layer formed on a lower surface of the substrate for mounting on a sub-mount;
a conductive adhesive layer formed on an upper surface of the substrate;
a reflective electrode formed on the conductive adhesive layer, wherein the conductive adhesive layer and the reflective electrode are metal and together form a metallic current spreading layer, and an entire edge of the metallic current spreading layer is recessed from an edge of the substrate so as to form a recessed portion;
an epitaxial structure on the reflective electrode, the epitaxial structure comprising an n-type GaN-based layer, a p-type GaN-based layer and an active region between the n-type GaN-based layer and the p-type GaN-based layer, the p-type GaN-based layer disposed between the active region and the metallic current spreading layer, wherein a part of the epitaxial structure is removed so as to form a mesa and expose an upper surface of the metallic current spreading layer; and
a pad contact formed on the exposed upper surface of the metallic current spreading layer for a bonding wire.
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Abstract
A thin-film light emitting diode includes an insulating substrate, a reflective metal electrode on the insulating substrate forming a current spreading layer, and an epitaxial structure on the electrode.
72 Citations
14 Claims
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1. A thin-film light emitting diode, comprising:
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a substrate; a metal layer formed on a lower surface of the substrate for mounting on a sub-mount; a conductive adhesive layer formed on an upper surface of the substrate; a reflective electrode formed on the conductive adhesive layer, wherein the conductive adhesive layer and the reflective electrode are metal and together form a metallic current spreading layer, and an entire edge of the metallic current spreading layer is recessed from an edge of the substrate so as to form a recessed portion; an epitaxial structure on the reflective electrode, the epitaxial structure comprising an n-type GaN-based layer, a p-type GaN-based layer and an active region between the n-type GaN-based layer and the p-type GaN-based layer, the p-type GaN-based layer disposed between the active region and the metallic current spreading layer, wherein a part of the epitaxial structure is removed so as to form a mesa and expose an upper surface of the metallic current spreading layer; and a pad contact formed on the exposed upper surface of the metallic current spreading layer for a bonding wire. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification