In-plane piezoresistive detection sensor

• US 9,146,252 B2
• Filed: 10/20/2010
• Issued: 09/29/2015
• Est. Priority Date: 10/23/2009
• Status: Active Grant

• Current Assignee: Commissariat a L'Energie Atomique (AES Corporation)
• Original Assignee: Commissariat a L'Energie Atomique (AES Corporation)
• Inventors: Robert, Philippe, Hentz, Sbastien
• Primary Examiner(s): Williams, Hezron E
• Assistant Examiner(s): Sinha, Tarun
• Application Number:
  US13/503,146
• Publication Number:
  US 20120210792A1
• Time in Patent Office: 1,805 Days
• Field of Search: 735/142.9, 427/100
• US Class Current: 1/1
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/123 by piezo-resistive elements, e.g. semiconductor strain gauges
• CPC Class Codes: G01P 2015/0817 for pivoting movement of the mass, e.g. in-plane pendulum

Abstract

An in-plane MEMS or NEMS detection device for measuring displacements directed along a direction including a seismic mass suspended with respect to a substrate, the seismic mass being pivotable about an axis perpendicular to the plane of the substrate, at least one piezoresistive strain gauge mechanically connected to the seismic mass and the substrate, wherein the piezoresistive gauge has a thickness lower than that of the seismic mass, and wherein the axis of the piezoresistive strain gauge is orthogonal to the plane containing the pivot axis and the center of gravity of the seismic mass and the plane is orthogonal to the direction of the displacements to be measured.

Claims

1. An in-plane MEMS or NEMS detection device for measuring displacements directed along a direction, comprising:

a seismic mass suspended with respect to a substrate, the seismic mass being pivotable about an axis perpendicular to the plane of the substrate;

at least one piezoresistive strain gauge suspended between the seismic mass and the substrate, and mechanically and electrically directly connected to the seismic mass and to an embedding pad anchored to the substrate,

the seismic mass being in turn suspended with respect to the substrate by at least one beam, the at least one beam being connected to the substrate at an area distinct from that by which the gauge is connected to the substrate,

wherein the piezoresistive gauge is thinner than the seismic mass, and wherein the axis of the piezoresistive strain gauge is orthogonal to the plane containing the pivot axis and the center of gravity of the seismic mass and the plane being orthogonal to the direction of the displacements to be measured, and

wherein the at least one beam has a thickness higher than a thickness of the piezoresistive gauge.

2. The in-plane MEMS or NEMS detection device according to claim 1, wherein the mechanical connection between the piezoresistive gauge and the seismic mass is located on or next to the plane containing the center of gravity and the pivot axis.

3. The in-plane MEMS or NEMS detection device according to claim 2, wherein the seismic mass includes a recess receiving an end of the gauge for being connected to the seismic mass, the end of the gauge being connected to a bottom of the recess, the bottom of the recess being located in or next to the plane containing the center of gravity and the pivot axis.

4. The in-plane MEMS or NEMS detection device according to claim 1, wherein the seismic mass includes an in-plane tapered area at a connection of the seismic mass with the piezoresistive gauge.

5. The in-plane MEMS or NEMS detection device according to claim 1, wherein a thickness of the seismic mass is in an order of a few tens μ

m and the thickness of the piezoresistive gauge is in an order of a few μ

m.

6. The in-plane MEMS or NEMS detection device according to claim 5, wherein the plane containing the pivot axis and the center of gravity form a plane of symmetry for suspension of the seismic mass.

7. The in-plane MEMS or NEMS detection device according to claim 1, further comprising:

the at least one beam maintaining the seismic mass suspended and carrying the rotational axis of the mass, the at least one beam having the thickness equal to or higher than that of the piezoresistive gauge and lower than that of the seismic mass.

8. The in-plane MEMS or NEMS detection device according to claim 7, wherein the at least one beam maintaining the seismic mass suspended and carrying the rotational axis of the mass, is substantially provided in the plane containing the center of gravity, which is parallel to the plane of the substrate.

9. The in-plane MEMS or NEMS detection device according to claim 1, further comprising:

the at least one beam maintaining the seismic mass suspended and carrying the rotational axis of the mass,

wherein the plane containing the pivot axis and the center of gravity form a plane of symmetry for suspension of the seismic mass, the least one beam having the thickness equal to a thickness of the seismic mass.

10. The in-plane MEMS or NEMS detection device according to claim 1, further comprising:

the at least one beam and an additional beam maintaining the seismic mass suspended and carrying the rotational axis of the mass, the beams being of substantially a same length, anchored to the substrate at two distinct points, and anchored to the seismic mass at a point through which the pivot axis passes.

11. The in-plane MEMS or NEMS detection device according to claim 1, further comprising an additional piezoresistive gauge, the piezoresistive gauges mounted as a differential symmetrically with respect to the plane containing the center of gravity and the pivot axis.

12. The in-plane MEMS or NEMS detection device according to claim 11, wherein mounting of both piezoresistive gauges mounted as a differential is associated with a Wheatstone half-bridge mounting.

13. The in-plane MEMS or NEMS detection device according to claim 1, wherein current flows between the embedding pad of the at least one piezoresistive gauge and an embedding pad of the beam, via the piezoresistive gauge and a hinge of the seismic mass with respect to the substrate about the axis.

14. The in-plane MEMS or NEMS detection device according to claim 1, wherein the at least one beam has the thickness higher than that of the piezoresistive gauge and equal to that of the seismic mass.

15. A method for making an in-plane MEMS or NEMS detection device, the method comprising:

forming a first thin area, having a first thickness forming at least one piezoresistive gauge; and

forming a second thick area, having a second thickness higher than the first thickness forming at least one seismic mass, the seismic mass being suspended with respect to a substrate and being pivotable about an axis perpendicular to the plane of the substrate, wherein

the forming of the at least one piezoresistive strain gauge includes suspending the at least one piezoresistive gauge between the seismic mass and the substrate, the at least one piezoresistive strain gauge being mechanically and electrically directly connected to the seismic mass and to an embedding pad anchored to the substrate,

the forming of the seismic mass includes suspending the seismic mass with respect to the substrate by at least one beam, the at least one beam being connected to the substrate at an area distinct from that by which the gauge is connected to the substrate, and the at least one beam having a thickness higher than that of the piezoresistive gauge, and

the piezoresistive gauge is thinner than the seismic mass, and the axis of the piezoresistive strain gauge is orthogonal to the plane containing the pivot axis and the center of gravity of the seismic mass and the plane being orthogonal to the direction of the displacements to be measured.

16. The method according to claim 15, wherein the first thin area is made by forming a portion of a second sacrificial layer within a layer of semi-conducting material, and etching the portion and a first sacrificial layer.

17. The method according to claim 15, wherein the forming the portion of the second sacrificial layer within the layer of the semi-conducting material includes

etching a first layer of semi-conducting material which is located on the first sacrificial layer,

depositing and etching the second sacrificial layer to define the portion, and

making a second layer of semi-conducting, conducting or insulating material.

18. The method according to claim 17, wherein the making the second layer of semi-conducting material on the portion is achieved by epitaxial growth of a semi-conducting material.

19. The method according to claim 17, wherein the second layer is a polycrystalline semi-conducting material.

20. The method according to claim 15, further comprising forming a third area, as a hinge area, with a thickness between that of the first area and that of the second area.

21. The method according to claim 20, wherein the first area and the third area are obtained by etching operation independent from each other.

22. The method according to claim 21, wherein etching of the third area is performed before etching the first and second areas, or through DRIE.