×

Group 13 nitride semiconductor device and method of its manufacture

  • US 9,147,732 B2
  • Filed: 05/03/2013
  • Issued: 09/29/2015
  • Est. Priority Date: 05/09/2012
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor device comprising:

  • a substrate;

    at least one semiconducting layer comprising a nitride of a group 13 element on said substrate; and

    an ohmic contact on the at least one semiconducting layer, said ohmic contact comprising a silicon-comprising portion on the at least one semiconducting layer and a metal portion adjacent to and extending over said silicon-comprising portion, the metal portion comprising titanium and a further metal, wherein the ohmic contact does not contain gold, wherein the metal portion comprises a titanium layer, a layer of the further metal over the titanium layer, and a capping layer made of a material containing titanium for protecting the layer of the further metal, wherein the silicon-comprising portion comprises a first silicon-comprising portion and a second silicon-comprising portion laterally separated from the first silicon-comprising portion, wherein a part of the metal portion extends between the first silicon-comprising portion and the second silicon-comprising portion, and wherein the metal portion completely envelopes the first silicon-comprising portion and the second silicon-comprising portion.

View all claims
  • 12 Assignments
Timeline View
Assignment View
    ×
    ×