Method for manufacturing semiconductor device
First Claim
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1. A method for manufacturing a semiconductor device, comprising:
- forming a gate electrode;
forming a gate insulating film over the gate electrode;
forming an oxide semiconductor film over the gate insulating film so as to overlap with the gate electrode;
after forming the oxide semiconductor film, performing a heat treatment on the oxide semiconductor film in an inert gas atmosphere;
after performing the heat treatment, forming an insulating film over the oxide semiconductor film; and
after forming the insulating film, performing an oxygen doping treatment on the insulating film.
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Abstract
In a manufacturing process of a bottom-gate transistor including an oxide semiconductor film, dehydration or dehydrogenation through heat treatment and oxygen doping treatment are performed. A transistor including an oxide semiconductor film subjected to dehydration or dehydrogenation through heat treatment and oxygen doping treatment can be a highly reliable transistor having stable electric characteristics in which the amount of change in threshold voltage of the transistor between before and after the bias-temperature stress (BT) test can be reduced.
161 Citations
17 Claims
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1. A method for manufacturing a semiconductor device, comprising:
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forming a gate electrode; forming a gate insulating film over the gate electrode; forming an oxide semiconductor film over the gate insulating film so as to overlap with the gate electrode; after forming the oxide semiconductor film, performing a heat treatment on the oxide semiconductor film in an inert gas atmosphere; after performing the heat treatment, forming an insulating film over the oxide semiconductor film; and after forming the insulating film, performing an oxygen doping treatment on the insulating film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for manufacturing a semiconductor device, comprising:
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forming a gate electrode; forming a gate insulating film over the gate electrode; forming an oxide semiconductor film over the gate insulating film so as to overlap with the gate electrode; after forming the oxide semiconductor film, performing a heat treatment on the oxide semiconductor film in an inert gas atmosphere; after performing the heat treatment, forming a source electrode and a drain electrode over the oxide semiconductor film; forming an insulating film over the oxide semiconductor film, the source electrode, and the drain electrode; and after forming the insulating film, performing an oxygen doping treatment on the insulating film. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17)
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