Thin film transistor having silicon-containing light absorption layer

• US 9,147,769 B2
• Filed: 08/12/2013
• Issued: 09/29/2015
• Est. Priority Date: 12/27/2012
• Status: Active Grant

• Current Assignee: E Ink Holdings Incorporated
• Original Assignee: E Ink Holdings Incorporated
• Inventors: Hsu, Cheng-Hang, Yu, Tzung-Wei, Chen, Wei-Tsung, Shinn, Ted-Hong
• Primary Examiner(s): Pham, Thanh V
• Application Number:
  US13/965,183
• Publication Number:
  US 20140183521A1
• Time in Patent Office: 778 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 29/78633 with a light shield
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A thin film transistor structure including a substrate, a gate, an oxide semiconductor layer, a gate insulation layer, a source, a drain, a silicon-containing light absorption layer and an insulation layer is provided. The gate insulation layer is disposed between the oxide semiconductor layer and the gate. The oxide semiconductor layer and the gate are stacked in a thickness direction. The source and the drain contact the oxide semiconductor layer. A portion of the oxide semiconductor layer without contacting the source and the drain defines a channel region located between the source and the drain. The oxide semiconductor layer is located between the substrate and the silicon-containing light absorption layer. The silicon-containing light absorption layer has a band gap smaller than 2.5 eV. The insulation layer is disposed between the oxide semiconductor layer and the silicon-containing light absorption layer, and in contact with the silicon-containing light absorption layer.

Claims

1. A thin film transistor structure, comprising:

a substrate;

a gate disposed on the substrate;

an oxide semiconductor layer disposed on the substrate, wherein the oxide semiconductor layer and the gate being stacked in a thickness direction;

a gate insulation layer disposed between the oxide semiconductor layer and the gate;

a source disposed on the substrate and in contact with the oxide semiconductor layer;

a drain disposed on the substrate and in contact with the oxide semiconductor layer, wherein a portion of the oxide semiconductor layer without in contact with the source and the drain defines a channel region and the channel region is located between the source and the drain;

a silicon-containing light absorption layer stacked in the thickness direction with the oxide semiconductor layer and the oxide semiconductor layer being located between the substrate and the silicon-containing light absorption layer, wherein the silicon-containing light absorption layer has a band gap smaller than 2.5 eV; and

an insulation layer disposed between the oxide semiconductor layer and the silicon-containing light absorption layer, and the insulation layer being in contact with the silicon-containing light absorption layer, wherein the insulation layer has a contact window exposing the drain and the silicon-containing light absorption layer extends to cover the contact window and is in contact with the drain.

2. The thin film transistor structure according to claim 1, wherein the source and the drain are located between the insulation layer and the gate insulation layer.

3. The thin film transistor structure according to claim 2, wherein a material of the silicon-containing light absorption layer comprises a doped-silicon.

4. The thin film transistor structure according to claim 1, further comprising a protection layer, wherein the gate, the oxide semiconductor layer, the gate insulation layer, the source, the drain, the insulation layer, and the silicon-containing light absorption layer are located between the substrate and the protection layer.

5. The thin film transistor structure according to claim 3, wherein a dopant of the doped-silicon comprises boron or phosphor.

6. The thin film transistor structure according to claim 1, wherein the insulation layer and the silicon-containing light absorption layer substantially have a same shape.

7. The thin film transistor structure according to claim 1, wherein the insulation layer is further in contact with the oxide semiconductor layer.

8. The thin film transistor structure according to claim 1, wherein each of the source and the drain is partially located at a side of the silicon-containing light absorption layer, in which the side is away from the substrate.

9. The thin film transistor structure according to claim 1, wherein a material of the silicon-containing light absorption layer comprises an amorphous silicon, a poly-crystalline silicon, a micro-crystalline silicon, a crystalline silicon, or a combination thereof.

10. The thin film transistor structure according to claim 1, wherein a material of the silicon-containing light absorption layer further comprises hydrogen, oxygen, nitrogen, fluorine, carbon, or a combination thereof.

11. The thin film transistor structure according to claim 1, wherein a material of the oxide semiconductor layer comprises zinc oxide (ZnO), indium-gallium-zinc oxide (IGZO), gallium-zinc oxide (GZO), zinc-tin oxide (ZTO), indium-zinc oxide (IZO), or a combination thereof.

12. The thin film transistor structure according to claim 1, wherein the source and the drain are located between the oxide semiconductor layer and the gate insulation layer.