Tetra-lateral position sensing detector
First Claim
1. A position sensing detector comprising a photodiode having an active area, said photodiode comprisinga semi insulating substrate layer;
- a buffered layer, wherein said buffered layer is formed directly atop the semi-insulating substrate layer;
an absorption layer, wherein said absorption layer is formed directly atop the buffered layer;
a cap layer comprising a p-type region, wherein said cap layer is formed directly atop the absorption layer;
a plurality of cathode electrodes physically extending from a top surface of said photodiode, pass through the cap layer, pass through the absorption layer and terminating in said buffered layer; and
at least one anode electrode electrically coupled to the p-type region in said cap layer, wherein said detector is capable of detecting eye-safe wavelengths.
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Abstract
The present invention is directed to a position sensing detector made of a photodiode having a semi insulating substrate layer; a buffered layer that is formed directly atop the semi-insulating substrate layer, an absorption layer that is formed directly atop the buffered layer substrate layer, a cap layer that is formed directly atop the absorption layer, a plurality of cathode electrodes electrically coupled to the buffered layer or directly to the cap layer, and at least one anode electrode electrically coupled to a p-type region in the cap layer. The position sensing detector has a photo-response non-uniformity of less than 2% and a position detection error of less than 10 μm across the active area.
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Citations
20 Claims
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1. A position sensing detector comprising a photodiode having an active area, said photodiode comprising
a semi insulating substrate layer; -
a buffered layer, wherein said buffered layer is formed directly atop the semi-insulating substrate layer; an absorption layer, wherein said absorption layer is formed directly atop the buffered layer; a cap layer comprising a p-type region, wherein said cap layer is formed directly atop the absorption layer; a plurality of cathode electrodes physically extending from a top surface of said photodiode, pass through the cap layer, pass through the absorption layer and terminating in said buffered layer; and at least one anode electrode electrically coupled to the p-type region in said cap layer, wherein said detector is capable of detecting eye-safe wavelengths. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A position sensing detector comprising a photodiode having an active area, said photodiode comprising
a semi insulating substrate layer; -
a buffered layer, wherein said buffered layer is formed directly atop the semi-insulating substrate layer; an absorption layer, wherein said absorption layer is formed directly atop the buffered layer; a cap layer, wherein said cap layer is formed directly atop the absorption layer, wherein a p-n junction is formed between said cap layer and said absorption layer; a plurality of cathode electrodes physically extending from a top surface of said photodiode, pass through the cap layer, pass through the absorption layer and terminating in said buffered layer; and at least one anode electrode electrically coupled to said cap layer. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19)
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20. A position sensing detector comprising a photodiode having an active area, said photodiode comprising
a semi insulating substrate layer; -
a buffered layer, wherein said buffered layer is formed directly atop the semi-insulating substrate layer; an absorption layer, wherein said absorption layer is formed directly atop the buffered layer; a cap layer, wherein said cap layer is formed directly atop the absorption layer, wherein a p-n junction is formed between said cap layer and said absorption layer; a plurality of cathode electrodes physically extending from a top surface of said photodiode, pass through the cap layer, pass through the absorption layer and terminating in said buffered layer; and at least one anode electrode electrically coupled to said cap layer.
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Specification