Semiconductor light emitting device and fabrication method thereof

• US 9,147,797 B2
• Filed: 09/13/2010
• Issued: 09/29/2015
• Est. Priority Date: 07/25/2005
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Choi, Jin Sik
• Primary Examiner(s): WOLDEGEORGIS, ERMIAS T
• Application Number:
  US12/881,022
• Publication Number:
  US 20110001164A1
• Time in Patent Office: 1,842 Days
• Field of Search: 438/46, 438/42, 438/43, 438/47, 438/44, 257/95, 257/98, 257/190, 257/E33.005, 257/E33.006, 257/E33.007, 257/E33.011, 257/E33.064, 257/E33.074
• US Class Current: 1/1
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/642 characterized by the shape

Abstract

A semiconductor light emitting device according to an embodiment includes a top layer having a top surface and a bottom surface, the top layer being an n electrode; an uneven pattern formed in the bottom surface of the n electrode; an n-type semiconductor layer formed under the n electrode, the n-type semiconductor layer having a top surface and a bottom surface; an uneven pattern formed in the top surface of the n-type semiconductor layer, the uneven pattern of the n-type semiconductor layer corresponding to the uneven pattern of the n electrode; an active layer formed under the n-type semiconductor layer; a p-type semiconductor layer formed under the active layer; and a p electrode formed under the p-type semiconductor layer.

Claims

1. A semiconductor light emitting device, comprising:

a top layer having a top surface and a bottom surface, the top layer being an n electrode;

an uneven pattern formed in the bottom surface of the n electrode;

a GaN based n-type semiconductor layer formed under the n electrode, the GaN based n-type semiconductor layer having a top surface and a bottom surface;

an uneven pattern formed in the top surface of the GaN based n-type semiconductor layer, the uneven pattern of the GaN based n-type semiconductor layer directly physically contacting the uneven pattern of the n electrode;

an active layer formed under the GaN based n-type semiconductor layer;

a GaN based p-type semiconductor layer formed under the active layer; and

a p electrode formed under the GaN based p-type semiconductor layer,

wherein a light emitting structure including the GaN based n-type semiconductor layer, the active layer, and the GaN based p-type semiconductor layer generates light,

wherein a top surface of the light emitting structure directly contacts the n electrode,

wherein the GaN based n-type semiconductor layer only includes GaN based semiconductor materials,

wherein the uneven pattern formed in the top surface of the GaN based n-type semiconductor layer is directly formed in the GaN based n-type semiconductor layer,

wherein the uneven pattern formed in the top surface of the GaN based n-type semiconductor layer is formed at different intervals,

wherein at least the n electrode is formed over the entire top surface of the GaN based n-type semiconductor layer, or at least the p electrode is formed over the entire surface of the GaN based p-type semiconductor layer,

wherein an entire surface of the n electrode contacts the GaN based n-type semiconductor layer,wherein a width of the top surface of the top layer and a width of the bottom surface of the top layer are the same, and wherein a growing substrate is not disposed between the n electrode and the p electrode.

2. The semiconductor light emitting device of claim 1, wherein the uneven pattern of the n electrode extends across an entire boundary between the n electrode and the GaN based n-type semiconductor layer.

3. The semiconductor light emitting device of claim 1, wherein the GaN based p-type semiconductor layer is transparent.

4. The semiconductor light emitting device of claim 1, wherein the active layer has a multi-quantum well structure.

5. The semiconductor light emitting device of claim 1, further comprising a p-contact semiconductor layer between the GaN based p-type semiconductor layer and the p electrode.

6. The semiconductor light emitting device of claim 1, further comprising an uneven pattern in the GaN based p-type semiconductor layer contacting the p electrode.

7. The semiconductor light emitting device of claim 6, wherein the uneven pattern in the GaN based p-type semiconductor layer is periodic.

8. The semiconductor light emitting device of claim 6, wherein the uneven pattern in the GaN based p-type semiconductor layer is non-periodic.