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LED epitaxial structure

  • US 9,147,799 B2
  • Filed: 02/26/2014
  • Issued: 09/29/2015
  • Est. Priority Date: 02/18/2011
  • Status: Expired due to Fees
First Claim
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1. An LED epitaxial structure, comprising:

  • a substrate, a buffer layer, and an epitaxial layer, the buffer layer grown on a top surface of the substrate, and the epitaxial layer grown on a top surface of the buffer layer, wherein the epitaxial layer includes a first n-type epitaxial layer, and a second n-type epitaxial layer, the first n-type epitaxial layer is formed between the buffer layer and the second n-type epitaxial layer, the first n-type epitaxial layer has a plurality of irregular holes therein, and the first n-type epitaxial layer has a doping concentration which varies along a thickness direction of the first n-type epitaxial layer.

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