Optoelectronic semiconductor chip, method of fabrication and application in an optoelectronic component

• US 9,147,806 B2
• Filed: 09/15/2011
• Issued: 09/29/2015
• Est. Priority Date: 09/20/2010
• Status: Active Grant

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Bhm, Bernd, Kruter, Gertrud, Pll, Andreas
• Primary Examiner(s): Ho, Anthony
• Assistant Examiner(s): LAIR, SAMUEL L
• Application Number:
  US13/825,156
• Publication Number:
  US 20140145228A1
• Time in Patent Office: 1,475 Days
• Field of Search: 257/98, 257/432, 257/E33.067, 257/E33.068, 257/E33.069, 257/E33.074, 438/29, 438/32, 438/71
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 31/0236 Special surface textures
• CPC Class Codes: H01L 31/054 Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: Y02E 10/52 PV systems with concentrators

Abstract

An optoelectronic semiconductor chip includes an active layer with a first and a second major face, including a semiconductor material which emits or receives radiation when the semiconductor chip is in operation; a patterned layer including three-dimensional patterns for outcoupling or incoupling radiation and arranged on the first major face in a beam path of the radiation, wherein the patterned layer includes an inorganic-organic hybrid material.

Claims

1. An optoelectronic semiconductor chip comprising:

an active layer with a first and a second major face, comprising a semiconductor material which emits or receives radiation when the semiconductor chip is in operation;

a patterned layer comprising three-dimensional patterns for outcoupling or incoupling radiation and arranged on the first major face in a beam path of the radiation;

wherein the patterned layer comprises an inorganic-organic hybrid material comprising

     1) a hydrolytic condensation product containing organofunctional silanes with organic substituents which are at least in part crosslinked with the organic prepolymer, and

     2) an organic prepolymer and the inorganic-organic hybrid material contain at least 20 wt. % of titanium and/or zirconium that is chemically bonded to the inorganic-organic hybrid material.

2. The semiconductor chip according to claim 1, further comprising a reflective layer arranged on the second major face of the active layer.

3. The semiconductor chip according to claim 1, wherein the three-dimensional patterns for outcoupling or incoupling radiation are only on top of the first major face present in the patterned layer.

4. The semiconductor chip according to claim 1, wherein the active layer has a layer thickness of 0.4 to 2 μ

m.

5. The semiconductor chip according to claim 1, wherein the patterned layer has a layer thickness of 0.5 to 3 μ

m.

6. The semiconductor chip according to claim 1, wherein the three-dimensional patterns are formed with a resolution of ≦

3 μ

m.

7. The semiconductor chip according to claim 1, wherein the patterned layer has a refractive index of ≧

1.6.

8. The semiconductor chip according to claim 1, wherein the patterned layer is arranged directly on the active layer.

9. A method of producing the semiconductor chip according to claim 1, comprising:

(a) providing a body comprising the active layer, wherein the active layer comprises the first and second major faces;

(b) applying a coating material to the first major face;

(c) patterning the coating material; and

(d) curing the coating material to yield the inorganic-organic hybrid material, thereby forming the patterned layer.

10. The method according to claim 9, wherein in step (c) a stamp patterns the coating material.

11. The method according to claim 9, wherein steps (c) and (d) are performed together.

12. The method according to claim 9, wherein the coating material is applied in step (b) as a layer with a layer thickness of 0.2 to 1.5 μ

m.

13. An optoelectronic component comprising a semiconductor chip according to claim 1.