Single walled carbon nanotube-based planar photodector

• US 9,147,845 B2
• Filed: 04/26/2013
• Issued: 09/29/2015
• Est. Priority Date: 04/26/2013
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd., Board of Trustees of the Leland Stanford Junior University (Stanford Management Co.)
• Original Assignee: Samsung Electronics Co. Ltd., Board of Trustees of the Leland Stanford Junior University (Stanford Management Co.)
• Inventors: Park, Young-jun, Bao, Zhenan, Park, Steve
• Primary Examiner(s): ZHU, SHENG-BAI
• Application Number:
  US13/871,377
• Publication Number:
  US 20140319461A1
• Time in Patent Office: 886 Days
• Field of Search: 257/296, 257/306, 257/309, 257/530, 257/213, 257/531, 438/197, 438/253, 438/254, 438/22, 438/268, 438/270
• US Class Current: 1/1
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: H10K 10/488 the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction
• CPC Class Codes: H10K 30/30 comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
• CPC Class Codes: H10K 39/30 Devices controlled by radiation
• CPC Class Codes: H10K 85/221 Carbon nanotubes

Abstract

A single-walled carbon nanotube-based planar photodetector includes a substrate; a first electrode and a second electrode disposed on the substrate and spaced apart from each other; a plurality of single-walled carbon nanotubes, each of the plurality of single-walled carbon nanotubes contacting the first electrode and the second electrode; and an adsorbent attached to a surface of at least one of the plurality of single-walled carbon nanotubes, wherein the adsorbent is capable of doping the at least one of the plurality of single-walled carbon nanotubes by photo-excitation.

Claims

1. A single-walled carbon nanotube-based planar photodetector comprising:

a substrate;

a self assembled monolayer (SAM) on the substrate in a form of a plurality of lines;

a first electrode and a second electrode disposed on the substrate and spaced apart from each other;

a plurality of single-walled carbon nanotubes, each of the plurality of single-walled carbon nanotubes contacting the first electrode and the second electrode, and the plurality of single-walled carbon nanotubes being aligned to closely contact a surface of the SAM; and

an adsorbent attached to a surface of at least one of the plurality of single-walled carbon nanotubes, wherein when irradiated with light, the adsorbent adsorbs either electrons or holes and p-dopes or n-dopes the at least one of the plurality of single-walled carbon nanotubes, and when not irradiated with light, the at least one of the plurality of single-walled carbon nanotubes is not p-doped or n-doped.

2. The single-walled carbon nanotube-based planar photodetector of claim 1, wherein the adsorbent is an electron acceptor that accepts electrons from the plurality of single-walled carbon nanotubes or an electron donor that donates electrons to the plurality of single-walled carbon nanotubes upon photo-excitation.

3. The single-walled carbon nanotube-based planar photodetector of claim 2, wherein the electron acceptor includes a fullerene or a fullerene derivative.

4. The single-walled carbon nanotube-based planar photodetector of claim 2, wherein the electron acceptor is at least one selected from the group consisting of phenyl-C61-butyric acid methyl ester (PCBM), phenyl-C71-butyric acid methyl ester(PC71BM), indene-C60 bisadduct (IC60BA), and indene-C70 bisadduct (IC70BA).

5. The single-walled carbon nanotube-based planar photodetector of claim 2, wherein the electron donor is at least one selected from the group consisting of poly-3-hexyl thiophene (P3HT), poly[2,5-bis(3-alkylthiophen-2-yl)thieno(3,2-b)thiophene] (PBTTT), and poly[5,5′

-bis(3-alkyl-2-thienyl)-2,2′

-bithiophene] (PQT).

6. The single-walled carbon nanotube-based planar photodetector of claim 1, wherein the adsorbent is a light absorbent and the light absorbent is any one of a quantum dot, an organic dye, and an inorganic sensitizer.

7. The single-walled carbon nanotube-based planar photodetector of claim 1, wherein the first electrode and the second electrode comprise materials having different work functions.

8. The single-walled carbon nanotube-based planar photodetector of claim 1 further comprising a unit for applying a predetermined voltage to the first electrode and the second electrode, wherein the first electrode and the second electrode comprise a same electrode material.

9. The single-walled carbon nanotube-based planar photodetector of claim 1, wherein the first electrode and the second electrode comprise at least one material selected from the group consisting of aluminum (Al), gold (Au), platinum (Pt), chromium (Cr), silver (Ag), and indium tin oxide (ITO).

10. The single-walled carbon nanotube-based planar photodetector of claim 1, further comprising a gate that adjusts movement of carriers on the plurality of single-walled carbon nanotubes.

11. The single-walled carbon nanotube-based planar photodetector of claim 10, wherein the substrate is a back gate.

12. The single-walled carbon nanotube-based planar photodetector of claim 1, wherein each of the plurality of single-walled carbon nanotubes contacts both the first electrode and the second electrode.

13. The single-walled carbon nanotube-based planar photodetector of claim 12, wherein the first electrode and the second electrode are arranged at opposite ends of each of the plurality of single-walled carbon nanotubes and are electrically connected to the plurality of single-walled carbon nanotubes.

14. The single-walled carbon nanotube-based planar photodetector of claim 1, wherein a length of the plurality of single-walled carbon nanotubes between the first electrode and the second electrode is about 0.1 to 1000 μ

m.

15. The single-walled carbon nanotube-based planar photodetector of claim 14, wherein the plurality of single-walled carbon nanotubes between the first electrode and the second electrode is about 0.1 to 2 μ

m, and each of the plurality of single-walled carbon nanotube is a semiconductor single-walled carbon nanotube.

16. The single-walled carbon nanotube-based planar photodetector of claim 15, wherein the plurality of single-walled carbon nanotubes between the first electrode and the second electrode is about 2 to 1000 μ

m, and at least 75% of the plurality of single-walled carbon nanotube are semiconductor single-walled carbon nanotubes.

17. The single-walled carbon nanotube-based planar photodetector of claim 1, wherein the SAM comprises at least one selected from the group consisting of octadecyltrichlorosilane (OTS), benzocyclobutene (BCB), 16-mercaptohexadecanoic acid (HMA), and alkylsiloxanes.

18. The single-walled carbon nanotube-based planar photodetector of claim 1, wherein the plurality of single-walled carbon nanotubes are p-doped or n-doped by irradiation by a light source.

19. The single-walled carbon nanotube-based planar photodetector of claim 1, wherein the at least one of the plurality of single-walled carbon nanotubes is doped by the adsorbent.