×

RF stacked power amplifier bias method

  • US 9,148,088 B1
  • Filed: 05/20/2014
  • Issued: 09/29/2015
  • Est. Priority Date: 05/20/2014
  • Status: Active Grant
First Claim
Patent Images

1. A RF stacked power amplifier, comprising:

  • a voltage-dividing circuit, receiving a system voltage and dividing the system voltage so as to output a first reference partial voltage and a second reference partial voltage;

    a negative feedback bias circuit, electrically connected to the voltage-dividing circuit so as to receive the second reference partial voltage, the negative feedback bias circuit receiving a negative feedback reference voltage and correspondingly outputting a second bias reference voltage according to a result of comparing the second reference partial voltage and the negative feedback reference voltage;

    a current source circuit, electrically connected to the voltage-dividing circuit so as to receive the first reference partial voltage, the current source circuit determining a bias reference current according to the first reference partial voltage; and

    a stacked amplifying circuit, electrically connected to the current source circuit and the negative feedback bias circuit, the stacked amplifying circuit outputting the negative feedback reference voltage and determining an operation bias point according to a first bias reference voltage and the bias reference current;

    wherein in AC mode the stacked amplifying circuit receives and amplifies a RF input signal and correspondingly outputs a RF output signal.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×