Multi-axis integrated MEMS devices with CMOS circuits and method therefor

• US 9,150,406 B2
• Filed: 11/19/2013
• Issued: 10/06/2015
• Est. Priority Date: 01/04/2010
• Status: Active Grant

• Current Assignee: Movella Incorporated (Movella Holdings, Inc.)
• Original Assignee: mCube, Inc.
• Inventors: Yang, Xiao (Charles)
• Primary Examiner(s): Vu, David
• Assistant Examiner(s): NGUYEN, CUONG B
• Application Number:
  US14/084,415
• Publication Number:
  US 20140162393A1
• Time in Patent Office: 686 Days
• US Class Current: 1/1
• CPC Class Codes: B81B 7/02 containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS] B81B7/04 takes precedence
• CPC Class Codes: B81C 1/0023 Packaging together an electronic processing unit die and a micromechanical structure die MEMS packages B81B7/0032; MEMS packaging processes B81C1/00261
• CPC Class Codes: B81C 1/00246 Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
• CPC Class Codes: B81C 2203/0771 Stacking the electronic processing unit and the micromechanical structure
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 27/0688 Integrated circuits having a three-dimensional layout
• CPC Class Codes: H01L 27/14603 Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/16235 Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip

Abstract

An integrated multi-axis mechanical device and integrated circuit system. The integrated system can include a silicon substrate layer, a CMOS device region, four or more mechanical devices, and a wafer level packaging (WLP) layer. The CMOS layer can form an interface region, on which any number of CMOS and mechanical devices can be configured. The mechanical devices can include MEMS devices configured for multiple axes or for at least a first direction. The CMOS layer can be deposited on the silicon substrate and can include any number of metal layers and can be provided on any type of design rule. The integrated MEMS devices can include, but not exclusively, any combination of the following types of sensors: magnetic, pressure, humidity, temperature, chemical, biological, or inertial. Furthermore, the overlying WLP layer can be configured to hermetically seal any number of these integrated devices.

Claims

1. A method for fabricating an integrated multi-axis mechanical device and integrated circuit system comprising:

providing a substrate member;

forming one or more CMOS devices upon the substrate member;

forming an interface layer on top of the one or more CMOS devices; and

forming at least four different MEMS physical sensors upon the interface layer using a foundry compatible process;

wherein forming the at least four different MEMS physical sensors comprises at least;

forming a gyroscope device comprising at least a first gyro axis, a second gyro axis, and a third gyro axis;

forming an accelerometer device comprising at least a first accel axis, a second accel axis, and a third accel axis;

forming a magnetic field sensing device comprising at least a first mag axis, a second mag axis, and a third mag axis; and

forming a pressure sensor device configured to detect a force in at least a direction; and

forming one or more bonding structures provided through a thickness of the substrate member, each of the bonding structures comprising a bonding pad, a via structure, and a pad structure.

2. The method of claim 1 wherein forming at least four MEMS physical sensors comprises:

depositing a first material layer above the interface layer;

forming the gyroscope device using the first material layer;

forming accelerometer device using the first material layer;

forming the magnetic field sensing device using the first material layer; and

forming the pressure sensor device using the first material layer.

3. The method of claim 1 wherein forming one or more MEMS physical sensors comprises:

depositing one or more material layers above the interface layer;

disposing a first mask layer above the one or more material layers;

patterning a portion of the gyroscope device using the first mask layer;

patterning a portion of the accelerometer device using the first mask layer;

patterning a portion of the magnetic field sensing device using the first mask layer; and

patterning a portion of the pressure sensor device using the first mask layer.

4. The method of claim 1 wherein forming one or more MEMS physical sensors comprises:

processing one or more material layers above the interface layer to form a processed layer;

forming the gyroscope device using the processed layer;

forming the accelerometer device using the processed layer;

forming the magnetic field sensing device using the processed layer; and

forming the pressure sensor device using the processed layer.

5. The method of claim 1 further comprising encapsulating the substrate member into a first package.

6. The method of claim 5 further comprising:

electrically coupling the first package to a processor;

electrically coupling the processor to a memory and a display; and

disposing the first package, the processor, the memory, and the display into a physical case.