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Cubic phase, nitrogen-based compound semiconductor films

  • US 9,153,431 B1
  • Filed: 11/06/2012
  • Issued: 10/06/2015
  • Est. Priority Date: 01/21/2009
  • Status: Active Grant
First Claim
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1. A method of forming a semiconductor device, comprising:

  • forming a plurality of grooves within a semiconductor substrate;

    forming a mask structure comprising a plurality of openings therein over the semiconductor substrate wherein the plurality of openings are aligned with the plurality of grooves;

    growing a nitrogen-based compound semiconductor epitaxial layer from each of the plurality of grooves in the semiconductor substrate, the epitaxial layer comprising a first crystal phase and a second crystal phase; and

    blocking the first crystal phase material with the sidewalls of the mask structure, wherein at least a portion of the second crystal phase material grows through each of the plurality of openings in the mask structure.

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